Design of differential low-noise amplifier with cross-coupled-SCR ESD protection scheme

Lin, Chun Yu; Ker, Ming Dou; Hsiao, Yuan Wen

doi:10.1016/j.microrel.2010.02.020

Cited by 5 publications

(2 citation statements)

References 19 publications

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“…While reducing parasitic capacitance [9,10], the BOX also makes vertical and deep body ESD structures no longer feasible. For instance, silicon-controlled-rectifiers (SCR) [11] cannot be directly implemented as in bulk technologies. Lateral ESD diodes have been developed and are widely used as rail-based clamping devices [12].…”

Section: Technology Trendsmentioning

confidence: 99%

Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology

Cao

Chun

Salman

et al. 2011

Microelectronics Reliability

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Section: Technology Trendsmentioning

confidence: 99%

Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology

Cao

Chun

Salman

et al. 2011

Microelectronics Reliability

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“…The ESD protection design with a dual SCR has been presented to improve the pin-to-pin ESD robustness [7] because the clamping voltage of the SCR is much lower than that of the diode under ESD stress. To further reduce the voltage drop under pin-to-pin ESD stress, the ESD protection design with a cross-coupled SCR has been presented [8], as shown in Fig. 2(c).…”

Section: Introductionmentioning

confidence: 99%

Design of ESD Protection Diodes With Embedded SCR for Differential LNA in a 65-nm CMOS Process

Lin

Fan

2014

IEEE Trans. Microwave Theory Techn.

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The pin-to-pin electrostatic discharge (ESD) issue for a differential low-noise amplifier (LNA) was studied in this work. A new design of ESD protection diodes with an embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential LNA. The proposed ESD protection design was modified from the conventional ESD protection design without adding any extra device. The SCR path was established directly from one differential input pad to the other differential input pad so the pin-to-pin ESD robustness can be improved. This design had been verified in a 65-nm CMOS process. Besides, this design had been further applied to a 24-GHz LNA in the same 65-nm CMOS process. Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.Index Terms-Differential low-noise amplifier (LNA), diode, electrostatic discharge (ESD), RF, silicon-controlled rectifier (SCR).

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Modeling the parasitic capacitance of ESD protection SCR to co-design matching network in RF ICs

Lin

Ker

2010

2010 International Symposium on Next Generation Electronics

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Design of differential low-noise amplifier with cross-coupled-SCR ESD protection scheme

Cited by 5 publications

References 19 publications

Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology

Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology

Design of ESD Protection Diodes With Embedded SCR for Differential LNA in a 65-nm CMOS Process

Modeling the parasitic capacitance of ESD protection SCR to co-design matching network in RF ICs

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