Design of GaN Low Noise Amplifier MMIC for 28 GHz Band 5G FR2 Communication for Base Station

Ahn, Hyunbae; Ji, Hong−Gu; Kang, Dongmin; Han, Jiancheng

doi:10.5573/ieie.2022.59.5.77

ieie

2022

DOI: 10.5573/ieie.2022.59.5.77

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Design of GaN Low Noise Amplifier MMIC for 28 GHz Band 5G FR2 Communication for Base Station

Hyunbae Ahn¹,

Hong−Gu Ji²,

Dongmin Kang³

et al.

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2023

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“…https://www.newspim.com/news/view/ UnManned Teaming) 복합체계 운용에서 통신용 반도체 소자가 필연적으로 요구되므로 GaN RF 반도체의 중요성이 더욱 증대될 것이다. 4) 이러한 변화 흐름에 따라 국내 반도체 개발 업체의 시장 진출이 확대되고, 다양한 산업 영역에서 GaN MMIC의 개발 진행성과도 다수 발표되고 있다 (Ahn et al, 2022;Han, Sung, & Kim, 2022;Jang, 2022;Lee, Kim, & Park, 2022;Lim et al, 2022;Noh et al, 2022;Sung et al, 2022a;Sung et al, 2022b)…”

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Development of a lifetime evaluation system and lifetime prediction method for GaN RF semiconductors used in manned and unmanned weapon systems

Choi,

Kang,

Kim

2023

J. Adv. Mil. Stud.

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The aim of this study is to develop a testing system that applies RF (Radio Frequency) stress to predict the lifespan of GaN RF semiconductors, a subject of numerous ongoing domestication studies. Additionally, the study proposes an approach that considers the complex effects of degradation mechanisms in predicting lifespan. When testing the longevity of communication semiconductors, it’s essential to apply RF-input to replicate real-world conditions. The system we developed applies wideband, high power RF stress to individual samples. It monitors RF characteristic changes in real-time and provides independent control of temperature and voltage stress for each sample. This ensures both effective lifespan tests and real-time tracking of semiconductor degradation patterns. Unlike traditional GaAs semiconductors, GaN ones exhibit the compounded influence of degradation mechanisms during RF operation. Therefore, a new lifespan estimation method that identifies the IV characteristic parameters for each degradation mechanism and deduces a relationship between the DC-accelerated life test and the RF-accelerated life test was proposed. The proposed method is significant in that it provides foundational data necessary for the systematic planning of semiconductor reliability testing and the direction of test equipment development. If lifespan tests proceed using this proposed method and data related to degradation mechanisms is derived, it is anticipated to positively impact the future reliability improvement of GaN RF semiconductors.

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unclassified

Development of a lifetime evaluation system and lifetime prediction method for GaN RF semiconductors used in manned and unmanned weapon systems

Choi,

Kang,

Kim

2023

J. Adv. Mil. Stud.

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show abstract

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Design of GaN Low Noise Amplifier MMIC for 28 GHz Band 5G FR2 Communication for Base Station

Cited by 1 publication

References 0 publications

Development of a lifetime evaluation system and lifetime prediction method for GaN RF semiconductors used in manned and unmanned weapon systems

Development of a lifetime evaluation system and lifetime prediction method for GaN RF semiconductors used in manned and unmanned weapon systems

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