Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy

Theodoropoulos, Constantinos; Mountziaris, T. J.; Moffat, Harry K.; Han, Jung

doi:10.1016/s0022-0248(00)00402-4

Cited by 95 publications

(94 citation statements)

References 33 publications

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“…The distributions of the thermal and flow fields are all in agreement with the results from the literature in Figure 17 [11]. However, in this experiment, the rotation rate of the susceptor is very high (1200 RPM), and the flow field is unstable.…”

Section: Numerical Analysis Of the 2-d Modelsupporting

confidence: 90%

“…The distributions of the thermal and flow fields are all in agreement with the results from the literature in Figure 17 [11]. is flat (uniform) above the substrate.…”

Section: Numerical Analysis Of the 2-d Modelsupporting

confidence: 89%

“…The distributions of the thermal and flow fields are all in agreement with the results from the literature in Figure 17 [11]. For Case 2, where diffusion dominates the transport, the exact placement of the nozzle is inconsequential; the match is inadequate near the wall of the reactor, where the TMG jet directly impinges.…”

Section: Numerical Analysis Of the 2-d Modelsupporting

confidence: 85%

“…There is one sidewall recirculation near the Figure 11. Schematic diagram of (a) Experiment 1 [10] and (b) Experiment 2 [11]. Figure 12 is a schematic diagram of the mesh for each reactor.…”

Section: Numerical Analysis Of the 2-d Modelmentioning

confidence: 99%

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Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis

Chen

Wei

et al. 2017

Coatings

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A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. The mechanism models were developed through rate of production analysis. All of the results can be compared in one schematic diagram, and the differences among these three mechanisms are pronounced at high temperatures. The simplified reaction mechanisms were then used as input for a two-dimensional computational fluid dynamics code FLUENT, enabling the accurate prediction of growth rates. Validation studies are presented for two types of laboratory-scale reactors (vertical and horizontal). A computational study including thermal and flow field was also performed to investigate the fluid dynamic in those reactors. For each study, the predictions agree acceptably well with the experimental data, indicating the reasonable accuracy of the reaction mechanisms.

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Section: Numerical Analysis Of the 2-d Modelsupporting

confidence: 90%

“…The distributions of the thermal and flow fields are all in agreement with the results from the literature in Figure 17 [11]. is flat (uniform) above the substrate.…”

Section: Numerical Analysis Of the 2-d Modelsupporting

confidence: 89%

Section: Numerical Analysis Of the 2-d Modelsupporting

confidence: 85%

Section: Numerical Analysis Of the 2-d Modelmentioning

confidence: 99%

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Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis

Chen

Wei

et al. 2017

Coatings

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“…[20][21][22] Inlet configurations of reactors have been optimized to suppress these unwanted reactions before the precursors reach the growth surface. [23][24][25] Developments in computer simulation technology have allowed us to analyze the elementary reactions numerically, and several reaction models have been reported, which were capable of reproducing experimental results with specific reactor configurations and growth conditions. [26][27][28][29][30][31][32][33] Several plausible candidate growth species that contribute to layer growth have been reported, including TMGa:NH 3 adducts, [(CH 3 ) 2 GaNH 2 ] 3 , [34][35][36] diatomic GaN, 37,38 and GaNH 2 .…”

mentioning

confidence: 99%

Kinetic Analysis of GaN-MOVPE via Thickness Profiles in the Gas Flow Direction with Systematically Varied Growth Conditions

Momose

Kamiya

Suzuki

et al. 2016

ECS J. Solid State Sci. Technol.

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We carried out a kinetic analysis of metallorganic vapor phase epitaxy (MOVPE) of GaN to investigate the dependence of the growth rate on the process conditions as a function of residence time of the precursors in the reactor. The wafer was not rotated during growth, allowing us to analyze the thickness profile of the film in the direction of gas flow, and hence the dependence of the growth rate on the residence time. The growth rate is determined mainly by the concentration of the growth species and mass transfer of the growth species to the wafer surface. The growth rate peaked in the flow direction, and the position of this peak could, in most cases, be explained by considering a combination of the linear gas velocity and the time constant for vertical diffusion of trimethylgallium (TMGa) and/or growth species across the NH 3 feed stream to the wafer surface. In some cases this was not possible, indicating that more complex effects were significant. This work is expected to contribute to understanding of the reaction pathways for GaN-MOVPE, and the growth rate data reported here are expected to provide useful benchmarks for growth simulations that combine computational fluid dynamics and reaction models. Gallium nitride (GaN) is a III/V compound semiconductor material with considerable potential for optoelectronic and high-power electronic devices due to its wide bandgap and high breakdown voltage.1-5 For these reasons, GaN is currently used for mass-produced light-emitting diodes (LEDs), lasers, and high-frequency devices. 6-10Metalorganic vapor phase epitaxy (MOVPE) is commonly employed to manufacture GaN films using trimethylgallium (TMGa) and NH 3 as group-III and group-V precursors, respectively. Research into the growth mechanisms involved in GaN-MOVPE in both academic and industrial institutions has found that the reaction chemistry is relatively complicated, consisting of gas-phase reactions followed by surface reactions. [11][12][13][14][15][16][17] This intrinsic complexity of the reactions suggests that it is not straightforward to design optimal reactors for mass production as well as settling the optimal growth conditions via conventional empirical approaches. Therefore, a variety of studies have been carried out with the aim of understanding GaN-MOVPE. Initially, attention mainly focused on identification of intermediate species that are generated from the gas-phase precursors, which contribute to the layer growth. It then became apparent that parasitic reactions in the gas phase resulted in the formation of adducts, even in the non-heated area of the reactor, in addition to those formed in the hot zone in the vicinity of the heated substrate.18,19 Some of these reaction products led to particle formation without contributing to layer growth. [20][21][22] 39 However, a model that can describe the growth behavior consistently in all reactor configurations and for all process conditions remains elusive. This is our concern, and necessitates comprehensive investigation on the behavior of GaN growt...

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Epitaxial Lateral Overgrowth of GaN

Beaumont

Vennéguès

Gibart

2001

phys. stat. sol. (b)

191

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Since there is no GaN bulk single crystal available, the whole technological development of GaN based devices relies on heteroepitaxy. Numerous defects are generated in the heteroepitaxy of GaN on sapphire or 6H‐SiC, mainly threading dislocations (TDs). Three types of TDs are currently observed, a type (with Burgers vector 1/3〈$11 \bar{2}0$〉); c type (with 〈0001〉) and mixed a+c (1/3〈$11 \bar{2}3$〉). The Epitaxial Lateral Overgrowth (ELO) technology produces high quality GaN with TD densities in the mid 106 cm—2, linewidth of the low‐temperature photoluminescence (PL) near‐bandgap recombination peaks <1 meV and deep electron traps reduced below 1014 cm—3 (compared to mid 1015 cm—3 in standard GaN). Numerous modifications of the ELO process have been proposed in order either to avoid technological steps (mask‐less ELO) or to improve it (pendeo‐epitaxy). Basically developed on either sapphire or 6H‐SiC, the ELO technology is also achievable on (111)Si or (111)3C‐SiC/Si provided that an appropriate buffer layer is grown to avoid cracks. More sophisticated technologies have been implemented to further increase the useable part of the ELO GaN surface (two technological steps, three‐step ELO). Unfortunately, in‐depth understanding of the basic ELO process is still missing, i.e. of the growth anisotropy and bending of dislocations.

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Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy

Cited by 95 publications

References 33 publications

Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis

Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis

Kinetic Analysis of GaN-MOVPE via Thickness Profiles in the Gas Flow Direction with Systematically Varied Growth Conditions

Epitaxial Lateral Overgrowth of GaN

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