Design of InP-based truncated nanopyramid solar cells with conformal coating of PEDOT: PSS for improved light harvesting efficiency

Agnihotri, Suneet Kumar; Samajdar, Dip Prakash; Arefinia, Zahra

doi:10.1016/j.optmat.2020.110475

Cited by 31 publications

(14 citation statements)

References 36 publications

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“…So, we have fixed the height of the NW H to 2000 nm, considering fabrication feasibility as reported in ref. 29 . Initially, we considered the angle of polarization as 0° for both TE and TM mode, and thereafter, we performed a polarization angle-dependent study in Section 3.5.…”

Section: Resultsmentioning

confidence: 99%

“…InP is an III–V semiconductor with a face-centered cubic (zinc-blende) structure and possesses high electron velocity in comparison to Si and GaAs, which makes it useful for high-power and high-frequency electronics. 29 InP exhibits exceptional optical properties for broadband sunlight harvesting such as direct bandgap, tunable bandgap energy to utilize a broad range of the solar spectrum, lower temperature coefficient, lower surface recombination velocity, and higher absorption co-efficient which makes it excellent absorber material for solar energy extraction. 45 InP also demonstrates excellent radiation resistance, which makes it very useful for space applications as well.…”

Section: Introductionmentioning

confidence: 99%

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Optical performance analysis of InP nanostructures for photovoltaic applications

et al. 2023

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical performance analysis of InP nanostructures for photovoltaic applications

et al. 2023

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“…O-GNPs with a height of 200 nm were placed in the middle of the organic active layer to enhance absorption. The thickness of the ITO placed above PEDOT:PSS was 100 nm, which was used to increase the mobility of carriers [38]. The top layer is made of 80 nm SiO 2 and 20 nm PMMA.…”

Section: Structure Designmentioning

confidence: 99%

“…There has been a recent flurry of polymer deposition on nanoparticles, and the short-circuit current of the combined solar cells has been greatly increased. The short-circuit current of the InP-based truncated nanoparticle solar cell with the PEDOT:PSS conformation coating was 24.73% [38]. PEDOT:PSS/c-Si hybrid solar cell based on metal nanoparticles has a short-circuit current of 41.71% [39].…”

Section: Introductionmentioning

confidence: 99%

Based on Ultrathin PEDOT:PSS/c-Ge Solar Cells Design and Their Photoelectric Performance

Yang

et al. 2021

Coatings

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In recent years, nanostructures have improved the performance of solar cells and are regarded as the most promising microstructures. The optical properties of PEDOT:PSS/c-Ge hybrid solar cells (HSCs) based on the octagon germanium nanoparticles (O-GNPs) were numerically analyzed using the finite-difference time-domain (FDTD) method. The optimal structure of the hybrid solar cell is determined by changing the thickness of the organic layer and structural parameters of nanoparticles to enhance the optical absorption and eventually achieve high broadband absorption. By changing the structure parameter of O-GNPs, we studied its effect on solar cells. The optimization of geometric parameters is based on maximum absorption. The light absorption of our optimized HSCs is basically above 90% between 200 and 1500 nm. PEDOT:PSS is placed on top of O-GNPs to transmit the holes better, allowing O-GNPs to capture a lot of photons, to increase absorbance value properties in the AM1.5 solar spectral irradiated region. The transmittance is increased by adding poly-methyl methacrylate (PMMA). At the same time, the electrical characteristics of Ge solar cells were simulated by DEVICE, and short-circuit current (Jsc), open-circuit voltage (Voc), maximum power (Pmax), filling coefficient (FF) and photoelectric conversion efficiency (PCE) were obtained. According to the optimization results after adjusting the structural parameters, the maximum short-circuit current is 44.32 mA/cm2; PCE is 7.84 mW/cm2; FF is 69%. The results show that the O-GNPs have a good light trapping effect, and the structure design has great potential for the absorption of HSCs; it is believed that the conversion efficiency will be further improved through further research.

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“…[1][2][3][4][5] Although III-V materials such as GaAs, InGaAs, InP, GaAsSb, and InGaSb have gained increasing popularity among material physicists and device engineers in recent years, these materials are particularly attractive to these groups because of their wide range of applications in the area of optical and electrical devices. [6][7][8][9][10] III-V compounds such as BGaAs are extensively used for different applications such as photodetectors, solar cells, and quantum dots due to its tunable direct band gap. [11][12][13] Because of the outstanding electrical properties, GaAs-based III-V ternary compounds have been widely investigated for applications in semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Impact of the mole fraction modulation on the RF/DC performance of GaAs_1−xSb_x FinFET

Dixit

Samajdar

Bagga

2021

Int J Numerical Modelling

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The impact of mole fraction variation on the RF/DC performance of GaAs 1Àx Sb x -based FinFET has been examined in this study. Changing the Sb mole fraction has substantial effect on the electronic band parameters of GaAs, which directly affects the device performance. Electrical properties of the device including electron density and mobility fluctuation are investigated as a function of Sb mole fraction. Additionally, device DC performance parameters such as the I ON /I OFF ratio, threshold voltage, transconductance, and device node capacitance, such as C gg and C ds , are studied using a technology computer-aided design (TCAD) simulator. The mole fraction dependence of the gate capacitance dictates the application of the proposed FinFET in the RF and high-frequency domains. A detailed investigation of the figures of merits such as intrinsic gain, intrinsic delay, dynamic power dissipation, power delay product, energy dissipation, and unity gain bandwidth reveals that GaAsSb can be a potential material for realization of low-power analog and digital circuits. The proper tuning of the mole fraction can help to optimize the device performance.

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Design of InP-based truncated nanopyramid solar cells with conformal coating of PEDOT: PSS for improved light harvesting efficiency

Cited by 31 publications

References 36 publications

Optical performance analysis of InP nanostructures for photovoltaic applications

Optical performance analysis of InP nanostructures for photovoltaic applications

Based on Ultrathin PEDOT:PSS/c-Ge Solar Cells Design and Their Photoelectric Performance

Impact of the mole fraction modulation on the RF/DC performance of GaAs_1−xSb_x FinFET

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Design of InP-based truncated nanopyramid solar cells with conformal coating of PEDOT: PSS for improved light harvesting efficiency

Cited by 31 publications

References 36 publications

Optical performance analysis of InP nanostructures for photovoltaic applications

Optical performance analysis of InP nanostructures for photovoltaic applications

Based on Ultrathin PEDOT:PSS/c-Ge Solar Cells Design and Their Photoelectric Performance

Impact of the mole fraction modulation on the RF/DC performance of GaAs1−xSbx FinFET

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Impact of the mole fraction modulation on the RF/DC performance of GaAs_1−xSb_x FinFET