2013
DOI: 10.1109/jstqe.2013.2244573
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Design of Lateral-Current-Injection-Type Membrane Distributed-Feedback Lasers for On-Chip Optical Interconnections

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Cited by 13 publications
(7 citation statements)
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“…Then IQE was improved to 70% (DQE of 59%) for a similar cavity size by increasing the separation between quantum-wells for better carrier injection in the LCI structure [33]. As for the fabrication of the membrane DFB cavity structure, surface grating structures on an additional a-Si top layer [34], [35] or InP top layer [36], [37] were reported, however the threshold current was in the order of 10 mA or so under a pulsed condition.…”
Section: Introductionmentioning
confidence: 99%
“…Then IQE was improved to 70% (DQE of 59%) for a similar cavity size by increasing the separation between quantum-wells for better carrier injection in the LCI structure [33]. As for the fabrication of the membrane DFB cavity structure, surface grating structures on an additional a-Si top layer [34], [35] or InP top layer [36], [37] were reported, however the threshold current was in the order of 10 mA or so under a pulsed condition.…”
Section: Introductionmentioning
confidence: 99%
“…The horizontal ordinate represent the displacement of the center of PWB and the core layer of the LCI laser in transverse and vertical directions. The asymmetry of the coupling loss in vertical direction is mainly caused by the asymmetric mode distribution of the laser as that of our previous device [6] because of the refractive index difference of the upper air cladding layer and the bottom semi-insulator host substrate. The minimum coupling loss of 1.7dB can be obtained when there is 300 nm displacement in vertical direction between the laser and the PWB with aspect ratio of 1:1.…”
Section: Introductionmentioning
confidence: 70%
“…3(a), where two III-V LCI optical chips [6] with the same structure are located on the Si substrate by BCB adhesive bonding and connected by the PWB. 1.5 -wide-PWB with an aspect ratio of 1:3 was fabricated when we used the objective lens with NA of 0.95 and set the power of femtosecond laser to be 88mW during the lithography.…”
Section: Exprimental Resultsmentioning
confidence: 99%
“…The demonstrated DFB laser on IMOS contains a relatively weak grating due to a shallow etch (120 nm into the 300 nm thick waveguiding layer), with which the fiber grating couplers are also designed and realized. The resulting coupling coefficient κ is 40 cm −1 , which is much weaker than other InP membrane and silicon hybrid DFB lasers with κ values in the order of hundreds to thousands per centimeters . The weak coupling leads to a long laser cavity.…”
Section: Device Building Blocksmentioning
confidence: 88%