2008
DOI: 10.1364/oe.16.005290
|View full text |Cite
|
Sign up to set email alerts
|

Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm

Abstract: Designs of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials are optimized using a genetic algorithm. Co-sputtered and low-refractive-index materials allow the fine-tuning of refractive index, which is required to achieve optimum anti-reflection characteristics. The algorithm minimizes reflection over a wide range of wavelengths and incident angles, and includes material dispersion. Designs of antireflection coatings for silicon-based image sensors and solar cells, as… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
82
0

Year Published

2010
2010
2019
2019

Publication Types

Select...
6
2

Relationship

1
7

Authors

Journals

citations
Cited by 165 publications
(83 citation statements)
references
References 14 publications
1
82
0
Order By: Relevance
“…Photosensitive devices such as photodetectors in long-wavelength optical fiber communication systems [1,2] and high-efficiency solar cells with multi-junction structures [3] are excellent examples of technologies that utilize the superb optical properties of InP-based systems. With the aforementioned devices, however, surface reflection is a serious problem that degrades the device performance because is reduces the efficiency of photon energy conversion [4]. Surface texturing of V-grooves [5][6][7], formation of insulator films [8], wide bandgap semiconductor films [9], and transparent conducting oxide films [10] have been investigated as anti-reflective layers on top of InP.…”
Section: Introductionmentioning
confidence: 99%
“…Photosensitive devices such as photodetectors in long-wavelength optical fiber communication systems [1,2] and high-efficiency solar cells with multi-junction structures [3] are excellent examples of technologies that utilize the superb optical properties of InP-based systems. With the aforementioned devices, however, surface reflection is a serious problem that degrades the device performance because is reduces the efficiency of photon energy conversion [4]. Surface texturing of V-grooves [5][6][7], formation of insulator films [8], wide bandgap semiconductor films [9], and transparent conducting oxide films [10] have been investigated as anti-reflective layers on top of InP.…”
Section: Introductionmentioning
confidence: 99%
“…Since in this sub-wavelength domain the light is not able to resolve the spatial features, an exact periodicity is not required. Therefore, also randomly arranged nanorods [25][26][27] or nanosponges [28] are perfectly suited for the purpose of reducing Fresnel reflection losses and have been considered in the past for integration into solar cells. If the effective refractive index profile is discontinuous, as in the case of binary gratings, the reduction of reflection losses will not cover an as broad spectral range but still a good performance can be achieved for the relevant spectral range [5].…”
Section: Principle Of Light Trapping With Gratingsmentioning
confidence: 99%
“…9 On the other hand, strong light reflection (> 30%) originating from the large refractive index difference between GaAs and the circumstance, e.g., air or vacuum for spacecraft applications demands the development of advanced antireflection coatings (ARCs) not only suppressing light reflection in a wide energy range but also with high stability and/or long-term endurance. [10][11][12] It will further increase the cost and complicate the manufacturing procedure of the related solar cells. 10,12 Aiming at lowering material consumption and quality requirement, and also at efficient and stable antireflection design, we propose a nano/micro-hemisphere array textured ultrathin filmbased GaAs solar cell configuration.…”
Section: Copyright 2013 Author(s) This Article Is Distributed Under mentioning
confidence: 99%