2013 IEEE 14th Workshop on Control and Modeling for Power Electronics (COMPEL) 2013
DOI: 10.1109/compel.2013.6626454
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Design of resistive-input class E resonant rectifiers for variable-power operation

Abstract: Abstract-Resonantrectifiers have important application in very-high-frequency power conversion systems, including dc-dc converters, wireless power transfer systems, and energy recovery circuits for radio-frequency systems. In many of these applications, it is desirable for the rectifier to appear as a resistor at its ac input port. However, for a given dc output voltage, the input impedance of a resonant rectifier varies in magnitude and phase as output power changes. A design method is introduced for realizin… Show more

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Cited by 12 publications
(10 citation statements)
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“…We therefore follow the methodology in [20] to design a class-E rectifier with near-resistive input impedance over a wide range of power levels at 2.45 GHz. The rectifier topology, including trim components used in the prototype system to counteract the parasitic effects of layout, device packaging, and passive components, is shown in Fig.…”
Section: B Class-e Resonant Rectifiermentioning
confidence: 99%
See 2 more Smart Citations
“…We therefore follow the methodology in [20] to design a class-E rectifier with near-resistive input impedance over a wide range of power levels at 2.45 GHz. The rectifier topology, including trim components used in the prototype system to counteract the parasitic effects of layout, device packaging, and passive components, is shown in Fig.…”
Section: B Class-e Resonant Rectifiermentioning
confidence: 99%
“…In keeping with the high-power wireless power transfer applications of interest here, we select the Avago HBAT540B diode for its high power-handling capability (among devices capable of operating at GHz frequencies). The inductor L r = 2.2 nH is chosen to resonate with the diode's parasitic shunt capacitance, C D , following the methodology in [20] and accounting for package parasitics. A 9-V zener diode acts as the rectifier load.…”
Section: B Class-e Resonant Rectifiermentioning
confidence: 99%
See 1 more Smart Citation
“…Class-E rectifiers can be designed to have near-resistive input impedance over a wide range of power levels, and are therefore useful for this application [8]. The 2.45 GHz rectifier design, including trim components used in the proto type system to counteract the parasitic effects of layout and passive components, is shown in Fig.…”
Section: B Class-e Resonant Rectifiermentioning
confidence: 99%
“…6, with component values given in Ta ble I. The inductor Lr = 2.3 nH is chosen to resonate with the Avago HBAT540B diode's parasitic shunt capacitance, CD, following the methodology in [8].…”
Section: B Class-e Resonant Rectifiermentioning
confidence: 99%