Design of Si-photonic structures to evaluate their radiation hardness dependence on design parameters

Zeiler, Marcel; Détraz, S.; Olanterä, Lauri; Pezzullo, Giuseppe; Nasr-storey, S. Seif El; Sigaud, Christophe; Soós, C.; Troska, J.; Vasey, F.

doi:10.1088/1748-0221/11/01/c01040

Cited by 13 publications

(10 citation statements)

References 18 publications

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“…With the knowledge gained in [14], further experiments were performed using the same customized silicon MZMs described there and in greater detail in [13]. The cross section of the modulator used is shown in Fig.…”

Section: Test Samples and Measurement Proceduresmentioning

confidence: 99%

“…The previous work has shown that SiPh MZMs are relatively insensitive to neutron radiation [10], [11], but they show strong degradation with the ionizing X-ray radiation [12]. Understanding of the radiation damage mechanisms in SiPh MZMs led to the design of custom MZMs [13] that have been shown to be significantly more radiation tolerant [14]. Fully optimized devices have been shown to be able to withstand a TID of up to 3.2 MGy (unbiased measurement), albeit with a larger initial device insertion loss.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Kraxner

Détraz

Olanterä

et al. 2018

IEEE Trans. Nucl. Sci.

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Optical links are vital components in the data transmission systems of high energy physics (HEP) experiments at CERN. With the ever higher beam fluxes achieved by the Large Hadron Collider, the optical components have to withstand higher radiation levels and handle ever-increasing data volumes. To face these challenges, the use of silicon photonics (SiPh) Mach-Zehnder modulators (MZMs) in the next generation of optical transceivers for HEP experiments is currently being investigated. In this paper, the dependence of the radiation hardness of custom-designed SiPh MZMs on temperature is reported, including the observed improvement in radiation tolerance at low operating temperatures that are closer to the typical temperatures found in HEP experiments. Furthermore, postirradiation annealing measurements of the devices were performed. An effective annealing method has been found by applying a forward current to the MZMs, leading to an almost immediate and full recovery of the device after irradiation up to 3 MGy. This enhanced device recovery method could effectively increase the radiation hardness tremendously in applications with low dose rates and periodic shutdown times.

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Section: Test Samples and Measurement Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Kraxner

Détraz

Olanterä

et al. 2018

IEEE Trans. Nucl. Sci.

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“…The SiPh MZMs used for all tests were designed by us and fabricated by imec [11] as part of a multiproject wafer (MPW) run offered through ePIXfab [12]. The detailed design parameters of the MZMs are described in [9]. The investigated GeSi PDs were building-block devices designed by imec.…”

Section: Test Samples and Measurement Procedures A Devicesmentioning

confidence: 99%

“…SiPh MZMs with such a conventional design could not be installed in the innermost detector regions of future HEP experiments due to their high sensitivity to ionizing radiation. Previously, we presented a custom-designed SiPh test chip that included several MZMs with varied design parameters [9] to assess whether the resistance against ionizing radiation can be improved through [5]. The data for the X-ray irradiation were taken from [6].…”

Section: Introductionmentioning

confidence: 99%

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Zeiler

Nasr-storey

Détraz

et al. 2017

IEEE Trans. Nucl. Sci.

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Radiation-hard optical links are the backbone of read-out systems in high-energy physics (HEP) experiments at CERN. The optical components must withstand large doses of radiation and strong magnetic fields and provide high data rates. Radiation hardness is one of the requirements that become more demanding with every new generation of HEP experiment. Previous studies have shown that vertical cavity surface emitting lasers, on which the current optical links are based, will not be able to withstand the expected radiation levels in the innermost regions of future HEP experiments. Silicon photonics (SiPh) is currently being investigated as a promising alternative technology to address this challenge. We irradiated SiPh Mach-Zehnder modulators (MZMs) with different design parameters to evaluate their resistance against ionizing radiation. We confirm that SiPh MZMs with a conventional design do not show a phase shift degradation when exposed to a 20-MeV neutron fluence of 3 • 10 16 n/cm 2. We further demonstrate that custom-designed MZMs with shallow etch optical waveguides and high doping concentrations in their p-n junctions exhibit a strongly improved radiation hardness over devices with a conventional design when irradiated with X-rays. We also found that MZMs withstood higher radiation levels when they were irradiated at a low temperature. In contrast, larger reverse biases during irradiation led to a faster device degradation. Simulations indicate that a pinch-off of holes is responsible for the device degradation. Photodiodes (PDs) were also tested for their radiation hardness as they are needed in silicon photonic transceivers. X-ray irradiation of building-block germanium-silicon PDs showed that they were not significantly affected.

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“…Previous work has shown that silicon photonics Mach-Zehnder modulators (MZMs) are relatively insensitive to neutron radiation, but show strong degradation with ionizing X-ray radiation. It was further presented, that with customized MZM designs, increasing the rib height of MZMs (shallow-etch device), the resistance against X-ray radiation can be improved [2,3,4,5,6]. Recently, the influence of forward biasing on the radiation hardness was reported and a strong post-irradiation annealing effect was demonstrated [7].…”

Section: Introductionmentioning

confidence: 99%

Radiation tolerance enhancement of silicon photonics for HEP applications

Kraxner¹,

Détraz²,

Olanterä³

et al. 2019

Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)

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Silicon photonics modulators and photodiodes are being investigated for use in optical links for High Energy Physics experiments. In order to withstand the harsh environment in the innermost detector regions of the Large Hadron Collider at CERN and in future High Energy Physics experiments beyond the Large Hadron Collider, components will have to be resistant against extreme levels of radiation. First, we show that Mach-Zehnder modulators, which lost their functionality after X-ray irradiation, can be fully recovered by applying a forward bias after irradiation. Devices irradiated and recovered withstand the same TID when re-irradiated. Furthermore, it is presented that by applying a forward bias already during irradiation, the irradiation-induced degradation can be compensated. The possibility of device recovery could lead to a tremendous increase of radiation resistance of the optical links. Additionally, the resistance against displacement damage and ionizing radiation of silicon germanium photodiodes is presented.

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Design of Si-photonic structures to evaluate their radiation hardness dependence on design parameters

Cited by 13 publications

References 18 publications

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Radiation tolerance enhancement of silicon photonics for HEP applications

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