Design of SOI CMOS operational amplifiers for applications up to 300°C

Eggermont, Jean-Pierre; Ceuster, D. De; Flandre, Denis; Gentinne, B.; Jespers, Paul; Colinge, Jean–Pierre

doi:10.1109/4.487994

Cited by 108 publications

(68 citation statements)

References 17 publications

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“…Up to 300 ºC, Si-based CMOS amplifiers [3], [4] have demonstrated higher gain and gain-bandwidth than those in SiC NMOSFET [7]- [10]. Above 300 ºC, SiC dominates, and compared to the SiC JFET amplifier [11], lower offset and higher gain-bandwidth have been achieved in this work.…”

Section: B Open-loop Measurementmentioning

confidence: 59%

“…where g m1, 3,5 are the transconductance of Q 1,3,5 respectively. The 2 nd -stage (Q 5 , Q 6 ) is biased by high current to provide high gain and high slew-rate.…”

Section: A Two-stage Amplificationmentioning

confidence: 99%

“…Several Silicon-based amplifiers have been demonstrated to operate up to 300 ºC [3]- [5]. At this temperature, Silicon-based electronics has already reached its limit, because the intrinsic carrier concentration of Silicon begins to approach device doping levels.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Tian

Lanni

Rusu

2016

IEEE Trans. Electron Devices

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Abstract-This paper presents a monolithic fully-differential amplifier implemented in a low-voltage 4H-SiC BJT technology. The circuit has been designed considering the variation of device parameters over a large temperature range. A base-current compensation technique has been applied to overcome the low input-resistance of the amplifier. The bare chip of the amplifier has been measured from 27 ºC to 500 ºC using a hot-chuck probe station. Its open-loop gain is 58 dB at 27 ºC, and monotonically decreases to 37 dB at 500 ºC. Its closed-loop gain reduction is around 5 dB over the investigated temperature range. The gain-bandwidth product drops from 2.8 MHz at 27 ºC to 1.3 MHz at 500 ºC with 470 pF off-chip compensation capacitors. A low total-harmonic-distortion of -58.4 dB at 27 ºC and -46.9 dB at 500 ºC is achieved due to the fully-differential implementation. A low input offset voltage of 0.5 mV at 27 ºC and 6.9 mV at 500 ºC is achieved without calibration. The relative high linearity and low offset demonstrate the potential of this technology to be further investigated for front-end sensor circuits in high-temperature applications.

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Section: B Open-loop Measurementmentioning

confidence: 59%

“…where g m1, 3,5 are the transconductance of Q 1,3,5 respectively. The 2 nd -stage (Q 5 , Q 6 ) is biased by high current to provide high gain and high slew-rate.…”

Section: A Two-stage Amplificationmentioning

confidence: 99%

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Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Tian

Lanni

Rusu

2016

IEEE Trans. Electron Devices

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show abstract

“…A bord des véhicules, en particulier haut de gamme, apparaissent de plus en plus d'organes électriques pour répondre à des besoins de confort : vitres électriques, sièges électriques, climatisation, frein à main, multimédia, direction assistée électrique, ventilation électrique, boîtes de vitesse robotisée et automatique, commande d'arbres à cames, freinage électro-hydraulique, suspensions, aide à la conduite... On estime qu'à l'horizon 2010, le besoin électrique à bord sera de l'ordre de 5 à 10 kW et il devient nécessaire de monter le niveau de tension du réseau à 42V avec les batteries, les convertisseurs de tension et les générateurs de tension correspondants [13,14]. C'est le cas par exemple de l'onduleur intégré à l'alterno-démarreur (ISG -Integrated Starter Generator) d'une puissance nominale de 6kW pour lequel le marché prévu pour l'Europe à l'horizon 2010 est d'environ 1Mpièces/an.…”

Section: Applications Automobilesunclassified

Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement

Allard¹,

Coquery²,

Dupont³

et al. 2005

J3eA

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“…Fortunately, thanks to the advantages of SOI CMOS technology, especially at high temperatures, their applications at high temperatures can be extended up to 300 o C, where its electrical performance is less impaired than the one found in the conventional MOSFETs [18][19][20].…”

Section: Soi Mosfets Investigationat High Temperaturesmentioning

confidence: 99%