Design of strain-adjustable Si0.1Ge0.78Sn0.12_Ge0.90Sn0.10_Si0.012Ge0.848Sn0.14 double-heterostructure SWIR photodetectors with giant magnetostrictive stressor

Abstract

Group-IV Ge1-xSnx alloys have attracted much attention due to their optical properties and variable band structures. In this work, a strain-adjustable Si0.1Ge0.78Sn0.12/Ge0.90Sn0.10/Si0.012Ge0.848Sn0.14 double-heterostructure short-wave infrared photodetector with giant magnetostrictive stressor is designed and characterized theoretically. Adjustable uniaxial tensile strain from 0 to 0.11% is introduced into Ge0.90Sn0.10 photodetector by adjusting the external magnetic field range from 0eV to 240kA/m to realize a continuously adjustable bandgap of 0.534eV ~ 0.461eV, thus obtaining the detection wavelength between 2.32μm and 2.69μm in short-wave infrared, which provid new ideas for the integration of magnetic-force-electrical-optical devices and next-generation optical communication systems in SWIR.