Advances in Photodiodes 2011
DOI: 10.5772/14085
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Design of Thin-Film Lateral SOI PIN Photodiodes with up to Tens of GHz Bandwidth

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Cited by 4 publications
(13 citation statements)
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“….A (1) in which C ph is the total photodiode capacitance and C inA is the input capacitance of the voltage amplifier. The bandwidth of this simple receiver is thus given by:…”
Section: The Simple Resistor Optical Receivermentioning
confidence: 99%
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“….A (1) in which C ph is the total photodiode capacitance and C inA is the input capacitance of the voltage amplifier. The bandwidth of this simple receiver is thus given by:…”
Section: The Simple Resistor Optical Receivermentioning
confidence: 99%
“…SOI has here an advantage over other Si integrated technologies for high speed applications (e.g. 10 GBps) because both the photodiode and the amplifier will have smaller capacitances, and also because SOI photodiodes themselves can achieve such high transit time frequencies [1].…”
Section: Comparison Of Transimpedance Amplifiersmentioning
confidence: 99%
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