Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

Wang, Lingquan; Yu, Edward T.; Taur, Yuan; Asbeck, P.M.

doi:10.1109/led.2010.2044012

Cited by 125 publications

(26 citation statements)

References 10 publications

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“…13 III-V heterostructures can reduce the effective bandgap overlap in type-II staggered gap TFETs for further enhancement of ON current. These TFETs have already been predicted to have significant performance enhancement compared with homojunctions by theoretical studies 14,15 as well as recent experimental demonstration. 8,9,16,17 Mixed As-Sb based staggered gap heterojunction enables a wide range of staggered band lineups depending on the material compositions in the source and channel materials.…”

mentioning

confidence: 91%

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

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Articles you may be interested inThe structural, morphological, defect properties, and OFF state leakage current mechanism of mixed As-Sb type-II staggered gap GaAs-like and InAs-like interface heterostructure tunnel field effect transistors (TFETs) grown on InP substrates using linearly graded In x Al 1-x As buffer by molecular beam epitaxy are investigated and compared. Symmetric relaxation of >90% and >75% in the two orthogonal h110i directions with minimal lattice tilt was observed for the terminal GaAs 0.35 Sb 0.65 and In 0.7 Ga 0.3 As active layers of GaAs-like and InAs-like interface TFET structures, respectively, indicating that nearly equal numbers of a and b dislocations were formed during the relaxation process. Atomic force microscopy reveals extremely ordered crosshatch morphology and low root mean square roughness of $3.17 nm for the InAs-like interface TFET structure compared to the GaAs-like interface TFET structure of $4.46 nm at the same degree of lattice mismatch with respect to the InP substrates. The GaAs-like interface exhibited higher dislocation density, as observed by cross-sectional transmission electron microscopy, resulting in the elongation of reciprocal lattice point of In 0.7 Ga 0.3 As channel and drain layers in the reciprocal space maps, while the InAs-like interface creates a defect-free interface for the pseudomorphic growth of the In 0.7 Ga 0.3 As channel and drain layers with minimal elongation along the Dx direction. The impact of the structural differences between the two interface types on metamorphic TFET devices was demonstrated by comparing p þ -i-n þ leakage current of identical TFET devices that were fabricated using GaAs-like and InAs-like interface TFET structures. Higher OFF state leakage current dominated by band-to-band tunneling process due to higher degree of defects and dislocations was observed in GaAs-like interface compared to InAs-like interface where type-II staggered band alignment was well maintained. Significantly lower OFF state leakage current dominated by the field enhanced Shockley-Read-Hall generation-recombination process at different temperatures was observed in InAs-like TFET structure. The fixed positive charge at the source/channel heterointerface influences the band lineup substantially with charge density greater than 1 Â 10 12 /cm 2 and the band alignment is converted from staggered gap to broken gap at $6 Â 10 12 /cm 2 . Clearly, InAs-like interface TFET structure exhibited 4Â lower OFF state leakage current, which is attributed primarily to the impact of the layer roughness, defect properties on the carrier recombination rate, suggesting great promise for metamorphic TFET devices for high-performance, and ultra-low power applications. V C 2012 American Institute of Physics.

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mentioning

confidence: 91%

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

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“…However, the ON-OFF ratio falls short of requirements for various ITRS technologies (http://www.itrs.net/Links/2012ITRS/Home2012.htm). The main reason for the poor off-state current is the leakage current through the Schottky barrier (Franklin et al, 2012a,b) and III-V devices (Gu et al, 2012;Dey et al, 2013) (Zhou et al, 2012;Dey et al, 2013;Moselund et al, 2012;Hu, 2008;Wang et al, 2010;Ganapathi and Salahuddin, 2011;Gnani et al, 2011;Tomioka et al, 2012). The ITRS targeted values for low operating power (LOP) and high performance (HP) technologies are highlighted (http://www.itrs.net/Links/2012ITRS/Home2012.htm).…”

Section: Itrs Requirements-2024mentioning

confidence: 99%

“…A comparison of the experimentally demonstrated performance of Schottky barrier CNTFETs with III-V MOSFET and T-FETs in Figure 8.9 reveals that today CNTFETs exhibit better on-state performance as compared to the rivaling III-V technologies (Zhou et al, 2012;Dey et al, 2013;Moselund et al, 2012;Hu, 2008;Wang et al, 2010;Ganapathi and Salahuddin, 2011;Gnani et al, 2011;Tomioka et al, 2012;Gu et al, 2012), however, the poor on-off ratio exhibited by the SB-CNTFETs reveals the need for short-channel carbon-based FETs with minimum off-state leakage. A number of obstacles need to be overcome before introducing CNTs into the mainstream manufacturing technology.…”

Section: Itrs Requirements-2024mentioning

confidence: 99%

Carbon-based nanomaterials

Pillai

Souza

2015

Modeling, Characterization, and Production of Nanomaterials

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“…In order to avoid these problems, a planar TFET device employing a lattice matched quaternary AlGaAsSb/InGaAs staggered gap material system in the source-channel junctions acting as a performance booster in the tunneling probability to offer an enhancement in the I ON /I OFF ratio has been recently reported [32]. A cylindrical surrounding gate NW based implementation of the same device could have been also realized to take advantage of the superior gate-controllability and higher scalability of nanowire structure.…”

Section: Introductionmentioning

confidence: 99%

“…High gate-to-drain capacitance C GD and low value of transconductance are identified as the major area of concerns and challenges for use of TFETs in high frequency analog/RF applications. Therefore, in this paper, for the first time, various device parameters for analog/mixed-signal applications are systematically investigated in order to substantially extend the preliminary results presented in [32]. To exhibit the superiority of the HETJ TFET, the analog/RF device figure-of-merits obtained from HETJ TFET are compared with HJ counterpart and HETJ MOSFET of same dimension.…”

Section: Introductionmentioning

confidence: 99%

Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

Chakraborty¹,

Sarkar

2015

Superlattices and Microstructures

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Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

Cited by 125 publications

References 10 publications

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Carbon-based nanomaterials

Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

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