Design, Optimization and Performance Assessment of Single Port Film Bulk Acoustic Resonator through Finite Element Simulation

Abstract

In this paper, the study is supported by design, FEA simulation, and practical RF measurements on fabricated single-port-cavity-based acoustic resonator for gas sensing applications. In the FEA simulation, frequency domain analysis was performed to enhance the performance of the acoustic resonator. The structural and surface morphologies of the deposited ZnO as a piezoelectric layer have been studied using XRD and AFM. The XRD pattern of deposited bulk ZnO film indicates the perfect single crystalline nature of the film with dominant phase (002) at 2θ = 34.58°. The AFM micrograph indicates that deposited piezoelectric film has a very smooth surface and small grain size. In the fabrication process, use of bulk micro machined oxide (SiO2) for the production of a thin membrane as a support layer is adopted. A vector network analyzer (Model MS2028C, Anritsu) was used to measure the radio frequency response of the resonators from 1 GHz to 2.5 GHz. As a result, we have successfully fabricated an acoustic resonator operating at 1.84 GHz with a quality factor Q of 214 and an effective electromechanical coupling coefficient of 10.57%.

Acoustic Effects of Uneven Polymeric Layers on Tunable SAW Oscillators

“…Another attractive option is film bulk acoustic resonators (FBARs). This is well justified by their ability to operate at very high frequencies (up to 20 GHz), as well as the notable recent progress in their manufacture [19] and design optimization [20].…”