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In this study, the energy states of electron and hole in GaxIn1-xNyAs1-y/GaAs tilted quantum well structure have been theoretically investigated. The content of x and y are 0.65 and 0.005 respectively. The energy states and wave functions have been calculated by solving the Schrödinger equation in real space. The well width of 2-10 nm, barrier width of 2-10 nm and tilted layer width of 1-3 nm are considered in this work. The results show that the electron and hole energies decrease with increasing the well width and tilted layer width. The wave functions are both symmetric (ground state) and anti-symmetric (the first excited state), and spread out as the well width increases. In addition, the barrier width of couple tilted quantum well structure has also been studied. It is found that the probability of finding electron and hole are equal in both wells and the wave function within barrier layer decreases with increasing the barrier width as well. The ground state energy increases and the first excited state energy decreases as the barrier increases. As a result, the two states tend to the same level when the barrier is more than 8 nm. This is because the wide barrier can decrease the interaction between two quantum wells and makes each quantum well acts as an isolated quantum well with no interaction between them.
In this study, the energy states of electron and hole in GaxIn1-xNyAs1-y/GaAs tilted quantum well structure have been theoretically investigated. The content of x and y are 0.65 and 0.005 respectively. The energy states and wave functions have been calculated by solving the Schrödinger equation in real space. The well width of 2-10 nm, barrier width of 2-10 nm and tilted layer width of 1-3 nm are considered in this work. The results show that the electron and hole energies decrease with increasing the well width and tilted layer width. The wave functions are both symmetric (ground state) and anti-symmetric (the first excited state), and spread out as the well width increases. In addition, the barrier width of couple tilted quantum well structure has also been studied. It is found that the probability of finding electron and hole are equal in both wells and the wave function within barrier layer decreases with increasing the barrier width as well. The ground state energy increases and the first excited state energy decreases as the barrier increases. As a result, the two states tend to the same level when the barrier is more than 8 nm. This is because the wide barrier can decrease the interaction between two quantum wells and makes each quantum well acts as an isolated quantum well with no interaction between them.
In this study the electron and hole states in Al0.33Ga0.67As/GaAs single quantum well structures including squared QW, step QW and tilted QW, have been theoretically studied by solving the Schrodinger equation in real space. The energies and wave functions of electron and hole are calculated for different well widths. It is found that energy level of electron and hole decreases with increasing the well width. Adding step or tilted layers gives rise to the decrease of electron and hole energy levels. The ground state energy level in a tilted single quantum well structure is lower than that in a step single quantum well structure. It is also found that the energy of electron and hole ground states do not change as the width of step layer increase. This is because the ground state occupies in a lower well only. The wave functions are symmetric (ground state) and antisymmetric (the first excited state). The maximum of ground state wave function is at the central of the well and the probability of finding electron and hole in excited states are different in each region. The hole levels are lower than the electron levels due to the lower well depth and higher mass of hole compared to electron.
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