Design optimization of silicon-based 1.55 μm InAs/InGaAs quantum dot square microcavity lasers with output waveguides

Abstract

We optimize the structure of a silicon-based InAs/InGaAs quantum dot square microcavity laser with an output waveguide structure. By designing a new laser structure, the emission wavelength is extended to 1550 nm. We investigate the structure parameters that affect the quality factor and optical mode of the square microcavity, including the side length of the microcavity, the width of the output waveguide, the cladding layer thickness and the etching depth. By connecting the output waveguide at the edge-midpoint of the square microcavity, both the unidirectional emission and mode selectivity can be obtained, which avoids mode competition. The 1550 nm wavelength single-mode laser is beneficial and has reat significance for the development of silicon-based optoelectronic integration.

Entropic measure of directional emissions in microcavity lasers

“…Hence, directional emission is also required to support a high output power, and also facilitate easy coupling to a waveguide for optoelectronic circuits. Therefore, to date, several microcavity lasers have been studies to achieve these properties simultaneously [12][13][14][15][16][17].…”