Design Principle of Telluride-Based Nanowire Heterostructures for Potential Thermoelectric Applications

Zhang, Genqiang; Fang, Hanqing; Yang, Haoran; Jauregui, Luis A.; Chen, Yong P.; Wu, Yue

doi:10.1021/nl301327d

Cited by 121 publications

(119 citation statements)

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“…[ 27 ] The work function of the TeNWs is assumed to be the same as that of bulk Te. [ 28 ] The work functions of PEDOT:PSS and rGO were measured using ultraviolet photoelectron spectroscopy (UPS), Figure S11). [ 24,29 ] The equilibrium band diagram for the ternary GDTe hybrid indicated that the energy barriers of 0.24 and 0.31 eV at the PEDOT:PSS/ TeNW and rGO/PEDOT:PSS interfaces, respectively, fi lter out low-energy carriers while they allow high-energy carriers to cross over the interface, thus enhancing the TE performance.…”

Section: Carrier Transport Characteristics Of Gdte Papermentioning

confidence: 99%

High‐Performance Thermoelectric Paper Based on Double Carrier‐Filtering Processes at Nanowire Heterojunctions

Choi

Lee

et al. 2016

Advanced Energy Materials

167

125

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As commercial interest in flexible power‐conversion devices increases, the demand for high‐performance alternatives to brittle inorganic thermoelectric (TE) materials is growing. As an alternative, we propose a rationally designed graphene/polymer/inorganic nanocrystal free‐standing paper with high TE performance, high flexibility, and mechanical/chemical durability. The ternary hybrid system of the graphene/polymer/inorganic nanocrystal includes two heterojunctions that induce double‐carrier filtering, which significantly increases the electrical conductivity without a major decrease in the thermopower. The ternary hybrid shows a power factor of 143 μW m−1 K−1 at 300 K, which is one to two orders of magnitude higher than those of single‐ or binary‐component materials. In addition, with five hybrid papers and polyethyleneimine (PEI)‐doped single‐walled carbon nanotubes (SWCNTs) as the p‐type and n‐type TE units, respectively, a maximum power density of 650 nW cm−2 at a temperature difference of 50 K can be obtained. The strategy proposed here can improve the performance of flexible TE materials by introducing more heterojunctions and optimizing carrier transfer at those junctions, and shows great potential for the preparation of flexible or wearable power‐conversion devices.

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Section: Carrier Transport Characteristics Of Gdte Papermentioning

confidence: 99%

High‐Performance Thermoelectric Paper Based on Double Carrier‐Filtering Processes at Nanowire Heterojunctions

Choi

Lee

et al. 2016

Advanced Energy Materials

167

125

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“…[1][2][3][4][5][6][7][8][9][10] Te/Se alloys are composed of composite Te-Se atom-bonded helical chains, which are randomly united via van der Waals forces to form highly anisotropic crystal structures. [1][2][3][4][5][6][7][8][9][10] Te/Se alloys are composed of composite Te-Se atom-bonded helical chains, which are randomly united via van der Waals forces to form highly anisotropic crystal structures.…”

Section: Introductionmentioning

confidence: 99%

One-step synthesis of high-quality homogenous Te/Se alloy nanorods with various morphologies

Cai

et al. 2015

CrystEngComm

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A convenient method was developed for controllable synthesis of homogeneous trigonal Te/Se alloy nanorods (t-Te/Se ANRs) with diverse morphologies, aspect ratios and compositions at room temperature in aqueous solution. These alloy nanorods were formed by a self-seeding process. By varying the molar ratio of TeO 2 to H 2 SeO 3 ĲxĲTe : Se)) in the initial precursors, the morphology of t-Te/Se ANRs was transformed mainly via two paths: formation of tri-fold nanorods (TNRs) or single nanorods (SNRs). The nanostructures of TNRs were generated only by using xĲTe : Se) ranging from 30 : 1 to 10 : 1, and SNRs were formed using xĲTe : Se) ranging from 200 : 1 to 100 : 1 or 2 : 1 to 1 : 1. The microstructures, compositions, and growth mechanisms of these nanorods were also analyzed in detail. Experimental section MaterialsTellurium dioxide (TeO 2 , Aladdin, 99.99%), selenious acid ĲH 2 SeO 3 , Aladdin, 99.99%), sodium dodecyl sulfate (SDS, Aldrich, 99.99%) and hydrazine monohydrate ĲN 2 H 4 ĴH 2 O, Sinopharm, 85%, AR) were used as-purchased. 18 MΩ cm CrystEngComm, 2015, 17, 3243-3250 | 3243 This journal is

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“…[20] The advances include the growth of branched and hyperbranched nanowire structures [21,22], two-nanowireheterostructures-based nanocomposites [23,24], ZnO nanotetrapod bridging networks, [25] and planar nanowire cross-junction architectures. [26] These works have shown the advantages of two-dimensional cross-junction over "bridge" junction.…”

mentioning

confidence: 99%

Nano-cross-junction effect on phonon transport in silicon nanowire cages

et al. 2016

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Wave effects of phonons can give rise to controllability of heat conduction beyond that by particle scattering at surfaces and interfaces. In this work, we propose a new class of 3D nanostructure: a silicon-nanowire-cage (SiNWC) structure consisting of silicon nanowires (SiNWs) connected by nano-cross-junctions (NCJs). We perform equilibrium molecular dynamics (MD) simulations, and find an ultralow value of thermal conductivity of SiNWC, 0.173 Wm -1 K -1 , which is one order lower than that of SiNWs.By further modal analysis and atomistic Green's function calculations, we identify that the large reduction is due to significant phonon localization induced by the phonon local resonance and hybridization at the junction part in a wide range of phonon modes. This localization effect does not require the cage to be periodic, unlike the phononic crystals, and can be realized in structures that are easier to synthesize, for instance in a form of randomly oriented SiNWs network.KEYWORDS: Nano-cross-junction, silicon-nanowires-cage, thermal conductivity, local phonon resonance, random network of silicon nanowiresOver the past decades, nanostructures have attracted great attentions due to its unique properties, including the low thermal conductivity. Most-commonly exercised approach is to lower thermal conductivity by phonon scattering at boundaries (surfaces and interfaces) that becomes dominant over intrinsic scattering as the length scales of the nanostructures decreases. Taking silicon nanowires (SiNWs) as a representative material, reduction of thermal conductivity has been realized by enhanced phonon scatterings at surfaces or boundaries due to high surface-to-volume ratio. Another line of effort to further reduce thermal conductivity which works on bulk materials is to utilize wave nature of phonons. Periodic phononic crystals can terminate or inhibit phonon propagation by inducing interference of phonons reflected at boundaries [12][13][14][15]. A challenge here is to ensure the occurrence of wave interferences, which requires strict periodicity of the internal structure with a size on the order of the phonon waves, which is about 1 nm at room temperature. [16] In addition, boundaries of the internal structures need to be smooth enough to specularly reflect phonons. These make production of the phononic crystals by bottom-up synthesis and top-down fabrication extremely challenging. [17] Therefore, there is a strong need for a structure that can give rise to wave effects (interference, localization, and resonance) "locally" so that the periodicity is no longer and planar nanowire cross-junction architectures.[26] These works have shown the advantages of two-dimensional cross-junction over "bridge" junction.In this letter, based on the above bottom-up approach and planar nano-cross-junctions (NCJs), [26] we take a step further and propose a silicon-nanowire-cage (SiNWC) ( Fig. 1(c)) structure consisting of SiNWs ( Fig. 1(a)) and 3D-NCJs ( Fig. 1(b)). Thus, the 1DSiNW is turned into a 3D bulk material as show...

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Design Principle of Telluride-Based Nanowire Heterostructures for Potential Thermoelectric Applications

Cited by 121 publications

References 36 publications

High‐Performance Thermoelectric Paper Based on Double Carrier‐Filtering Processes at Nanowire Heterojunctions

High‐Performance Thermoelectric Paper Based on Double Carrier‐Filtering Processes at Nanowire Heterojunctions

One-step synthesis of high-quality homogenous Te/Se alloy nanorods with various morphologies

Nano-cross-junction effect on phonon transport in silicon nanowire cages

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