Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs

Abstract

We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the next generation of power switching devices. These p-IGBTs exhibit significant conductivity modulation in the drift layer. The maximum currents of the experimental p-channel IGBTs are 1.2x and 2.1x higher than the ideal 20 kV n-channel DMOSFETs at room temperature and 175°C, respectively.

A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer

“…As a result, it has become a promising power semiconductor device. Many studies have attempted to produce a method of simulation/experiment design and fabricate a 4H–SiC IGBT device [ 2 , 3 , 4 , 5 ]; some researchers have focused on the ultra-low specific on-resistance [ 1 , 6 , 7 , 8 ], while others have aimed to solve the inherent tail current [ 9 , 10 , 11 ].…”

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

“…For a low-carbon-emission society and in terms of energy security, the use of a smart grid and high-voltage DC (HVDC) transmission systems in the grid connections of electric power systems is desirable. SiC IGBTs offer very low on-resistance MOS-controlled ultrahigh-voltage switching devices [1][2][3], which would be extremely beneficial for reductions in the size of and losses in the power electronics components used in these systems. We have been working on a SiC p-channel IGBT with a break down voltage (BV) of 10 kV [4,5] as well as a PiN diode with a BV of 13 kV [6], which could be used as a high-quality n ++ substrate.…”