2016
DOI: 10.1016/j.proeng.2015.10.153
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Design, Simulations, and Optimizations of Mid-infrared Multiple Quantum Well LEDs

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Cited by 8 publications
(3 citation statements)
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“…Infrared LEDs or lasers are used as the light source in the monitor. GaAs, GaInSb, and AlGaInSb semiconductors are often used to make infrared LEDs [25]. Infrared LEDs as a light source is used by Scholz et al to monitor the absorption of CO2 at around 4.2 μm [26].…”
Section: Introductionmentioning
confidence: 99%
“…Infrared LEDs or lasers are used as the light source in the monitor. GaAs, GaInSb, and AlGaInSb semiconductors are often used to make infrared LEDs [25]. Infrared LEDs as a light source is used by Scholz et al to monitor the absorption of CO2 at around 4.2 μm [26].…”
Section: Introductionmentioning
confidence: 99%
“…For example, InAsSb/InAsSbP double‐hetero structure grown by Liquid Phase Epitaxy (LPE) was investigated to show a strong room temperature emission at 4.6 μm, suited for carbon mono‐oxide (CO) detection . Strong carrier confinement of quantum well (QW) structure such as InSb/AlInSb and GaInSb/AlGaInSb was also found to be an attractive material for improved internal quantum efficiency . Furthermore, there is another approach of improving the light extraction efficiency, for example, by introducing the resonant cavity structure …”
Section: Introductionmentioning
confidence: 99%
“…Simulation results show that a good control of the optical wavelength and efficient confinement for carrier in the active region is obtained if a MQW active region in the structure design is included [6] The improvement of selectivity inherent to these devices can be made by using quantum well infrared photodetectors having a resonator (R-QWIP). The benefit of resonances is to increase the quantum conversion efficiency [7][8][9]. These detectors will convert the far infrared light signal to be amplified by HBT which derive a visible Light Emitting Diode (LED).…”
Section: Introductionmentioning
confidence: 99%