2017 Symposium on VLSI Technology 2017
DOI: 10.23919/vlsit.2017.7998166
|View full text |Cite
|
Sign up to set email alerts
|

Design-technology co-optimization for OxRRAM-based synaptic processing unit

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
46
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
5
3
1

Relationship

0
9

Authors

Journals

citations
Cited by 54 publications
(47 citation statements)
references
References 3 publications
1
46
0
Order By: Relevance
“…Burr et al propose to use phase-change memories (PCM) to design neuromorphic crossbars [22]. Mallik et al propose to use oxidebased resistive RAM (OxRAM) as alternative [54]. While all these orthogonal works focus on the design of a crossbar, we focus on the architecture of a neuromorphic chip integrating multiple such crossbars.…”
Section: B Neuromorphic Hardwarementioning
confidence: 99%
“…Burr et al propose to use phase-change memories (PCM) to design neuromorphic crossbars [22]. Mallik et al propose to use oxidebased resistive RAM (OxRAM) as alternative [54]. While all these orthogonal works focus on the design of a crossbar, we focus on the architecture of a neuromorphic chip integrating multiple such crossbars.…”
Section: B Neuromorphic Hardwarementioning
confidence: 99%
“…The resistance switching random access memory (OxR-RAM) technology presents an attractive option for implementing the synaptic cells of a crossbar due to its demonstrated potential for low-power multilevel operation and high integration density [2]. An OxRRAM cell is composed of an insulating film sandwiched between conducting electrodes forming a metal-insulator-metal (MIM) structure (see Figure 2).…”
Section: A Oxide-based Resistive Ram (Oxrram) Technologymentioning
confidence: 99%
“…Here, neural circuity is tightly coupled with synaptic storage, which eliminates the performance and energy bottlenecks of sharedmemory systems for machine learning inference [1]. Non-Volatile Memory (NVM) cells such as oxide-based resistive switching random access memory (OxRRAM) can implement multilevel analog operations, which make them ideal candidates for storing model parameters, i.e., the synaptic weights of a machine learning model [2].…”
Section: Introductionmentioning
confidence: 99%
“…pre-synaptic neurons while the vertical wires are connected to post-synaptic neurons. Non-Volatile Memory (NVM) cells are placed at the crosspoints of each crossbar to implement storage of synaptic weights [24,72]. 1 [25], which is representative of many neuromorphic platforms such as DYNAP-SE [73], TrueNorth [47], and Loihi [45].…”
Section: Introductionmentioning
confidence: 99%