Proceedings of the 40th Annual Design Automation Conference 2003
DOI: 10.1145/775832.776029
|View full text |Cite
|
Sign up to set email alerts
|

Designing mega-ASICs in nanogate technologies

Abstract: This paper discusses challenges the designer faces in integrating entire system product designs, containing tens or even hundreds of millions of logic gates, into single chip solutions now within reach using circuit densities possible in the latest silicon technologies. Managing designs of this size presents a new dimension of issues, and managing the physical and electrical effects of these high density device geometries presents another; solutions in both these areas are presented. Lastly, this paper discuss… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2005
2005
2012
2012

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 10 publications
(4 citation statements)
references
References 25 publications
0
4
0
Order By: Relevance
“…Leakage Power dissipation in LSI design has been increasing exponentially with device scaling [1]. Power Gating (PG) is a well-known technique for reducing leakage, in which the power of logic gates with low-Vth is switched by high-Vth power switch transistors.…”
Section: Fine-grained Power Gatingmentioning
confidence: 99%
“…Leakage Power dissipation in LSI design has been increasing exponentially with device scaling [1]. Power Gating (PG) is a well-known technique for reducing leakage, in which the power of logic gates with low-Vth is switched by high-Vth power switch transistors.…”
Section: Fine-grained Power Gatingmentioning
confidence: 99%
“…Leakage power dissipation in LSI chips has been increasing exponentially with device scaling [7], and its reducing techniques are indispensable especially for embedded usage. Several techniques have been proposed and some of them are applied to FPGAs.…”
Section: Related Work a Leakage Reduction Techniques For Reconfimentioning
confidence: 99%
“…After 90nm CMOS process, the amount of leakage power is remarkably increased, and it will occupy considerable portion of the total power in the future [7]. Since the leakage power is relational to the chip area, the technique to reduce it will be important especially in DRPAs using a number of PEs.…”
Section: Introductionmentioning
confidence: 99%
“…The new industrial platform is commonly called structured ASIC or hybrid-FPGA structures and is pursued by large semiconductor companies, CAD houses, and start-ups [4,5,7,9,12,15,17,18]. Academic researchers often refer to this implementation platform as regular fabrics and have focused their efforts mainly on either defining the structure of the fabric or exploring how the physical design is impacted by the emerging implementation platforms [2,6,7,8,11,13,14].…”
Section: Introductionmentioning
confidence: 99%