Designing of double gate HEMT in TCAD for THz applications

DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application

“…InAlAs/InGaAs HEMTs play a leading role in the communication domain ranging from cell phones to electronic warfare systems such as radar and radio astronomy and amplificator application like LNA using an inductive drain feedback technique for wireless application at 5.8GHz and was used in LNA that designed using T-network as a matching technique was used at the input and output terminal, inductive generation to the source and an inductive drain feedback [11,12]. The particular carrier transport properties of III-V materials are very attractive for THz applications, where outstanding high frequency characteristics have been reported [13][14][15]. InP-based electron mobility HEMTs are progressively becoming important for the fabrication of millimeter wave-MMICs (monolithic microwave integrated circuits) with high frequency and low noise applications and used for extraction that was described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range [16].…”