Designing reliable polymer coatings

Shaffer, Edward O.; McGarry, Frederick J.; Hoang, Luu

doi:10.1002/pen.10635

Cited by 44 publications

(14 citation statements)

References 8 publications

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“…[17] The method consists of applying a thick backing material, such as epoxy in this case, to the test structure that is on a rigid substrate. The backinglayer material must have a known stress±temperature profile and higher fracture toughness than the test structures.…”

Section: Fracture Toughnessmentioning

confidence: 99%

Development of a Low-Dielectric-Constant Polymer for the Fabrication of Integrated Circuit Interconnect

et al. 2000

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For faster, smaller, and higher performance integrated circuits, a low dielectric constant insulator is required to replace silicon dioxide. Here the properties of a new dielectric—SiLK resin, a solution of a low‐molecular‐weight aromatic thermosetting polymer—are reviewed and examples of its application in the fabrication of interconnect structures, such as the one shown in the Figure, are given.

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Section: Fracture Toughnessmentioning

confidence: 99%

Development of a Low-Dielectric-Constant Polymer for the Fabrication of Integrated Circuit Interconnect

et al. 2000

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“…These results were further confirmed by quantifying the mechanical adhesion of the films using a modified edge liftoff test technique 16,17. …”

mentioning

confidence: 71%

Process Optimization and Integration of Trimethylsilane-Deposited α-SiC:H and α-SiCO:H Dielectric Thin Films for Damascene Processing

Gray

Loboda

Bremmer

et al. 2003

J. Electrochem. Soc.

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The semiconductor grade organosilicon gas trimethylsilane ͑Dow Corning Z3MS͒ can be used to deposit unique amorphous hydrogenated silicon carbide ͑␣-SiC:H͒-based alloy films that exhibit desirable properties such as chemical resistance, low stress, low permittivity, and low leakage. These film characteristics are ideal for applications in Cu-damascene interconnect technology. In this work, the results of a comprehensive study of Z3MS plasma enhanced chemical vapor deposition ͑PECVD͒ dielectric films are reported where all depositions were performed in commercial production PECVD equipment. Processing for ␣-SiC:H films deposited from Z3MS/He mixtures was optimized for deposition rate, uniformity, and permittivity. The processing parameters can be tuned for relative permittivity down to ϳ 4.2 making ␣-SiC:H an attractive substitute for PECVD silicon oxide or silicon nitride. Using mixtures of Z3MS and N 2 O precursors, ␣-SiCO:H films were deposited with very high deposition rates and film permittivity as low as ϳ 2.5. These films have been applied in damascene technology. Physical properties and stability of blanket films were studied. Measurement of relative permittivity, leakage current, and breakdown voltage was performed on metal/dielectric/metal structures. Fourier transform infrared, X-ray photoelectron, and high-energy ion scattering spectrometry were used to determine bonding and film compositions. Integration issues related to deep ultraviolet lithography, dry etch, strip, and metallization are discussed. Optimized film processes were integrated into 0.18 m Cu damascene interconnect process technology and the electrical results were compared to standard PECVD oxide. The results of these studies indicate that the device performance improvements inferred from the blanket film properties can be realized in fully integrated interconnect structures.

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“…For example, contact methods such as the probe tack test are not suitable for measuring the interfacial strength of a coating adhered to a substrate. To this end, NIST researchers adapted the edge-delamination test [89] to evaluate the adhesion of combinatorial coating libraries to various substrates. In the edge-delamination test, thermal stress arising from cooling of a film/substrate system can propagate an initial crack along the film-substrate interface.…”

Section: Glassy Materials: Edge-delamination Testsmentioning

confidence: 99%

Gradient and Microfluidic Library Approaches to Polymer Interfaces

Fasolka¹,

Stafford²,

Beers³

2009

Polymer Libraries

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We present an overview of research conducted at the National Institute of Standards and Technology aimed at developing and applying combinatorial and high-throughput measurement approaches to polymer surfaces, interfaces and thin films. Topics include (1) the generation of continuous gradient techniques for fabricating combinatorial libraries of film thickness, temperature, surface chemistry and polymer blend composition, (2) high-throughput measurement techniques for assessing the mechanical properties and adhesion of surfaces, interfaces and films, and (3) microfluidic approaches to synthesizing and analyzing libraries of interfaciallyactive polymer species.

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Designing reliable polymer coatings

Cited by 44 publications

References 8 publications

Development of a Low-Dielectric-Constant Polymer for the Fabrication of Integrated Circuit Interconnect

Development of a Low-Dielectric-Constant Polymer for the Fabrication of Integrated Circuit Interconnect

Process Optimization and Integration of Trimethylsilane-Deposited α-SiC:H and α-SiCO:H Dielectric Thin Films for Damascene Processing

Gradient and Microfluidic Library Approaches to Polymer Interfaces

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