Desorption dynamics of oxide nanostructures fabricated by local anodic oxidation nanolithography

Mori, G.; Lazzarino, Marco; Ercolani, Daniele; Sorba, L.; Heun, S.; Locatelli, Andrea

doi:10.1063/1.1923165

Cited by 16 publications

(14 citation statements)

References 34 publications

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“…21 Usually heights are measured with respect to the substrate baseline, consequently reported oxide heights differs from the true oxide thickness. In Si approximately 60% of the oxide is above the substrate baseline.…”

Section: Local Oxidation Nanolithographymentioning

confidence: 99%

Nano-chemistry and scanning probe nanolithographies

García¹,

Martínez²,

Martínez³

2006

Chem. Soc. Rev.

361

306

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The development of nanometer-scale lithographies is the focus of an intense research activity because progress on nanotechnology depends on the capability to fabricate, position and interconnect nanometer-scale structures. The unique imaging and manipulation properties of atomic force microscopes have prompted the emergence of several scanning probe-based nanolithographies. In this tutorial review we present the most promising probe-based nanolithographies that are based on the spatial confinement of a chemical reaction within a nanometer-size region of the sample surface. The potential of local chemical nanolithography in nanometer-scale science and technology is illustrated by describing a range of applications such as the fabrication of conjugated molecular wires, optical microlenses, complex quantum devices or tailored chemical surfaces for controlling biorecognition processes.

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Section: Local Oxidation Nanolithographymentioning

confidence: 99%

Nano-chemistry and scanning probe nanolithographies

García¹,

Martínez²,

Martínez³

2006

Chem. Soc. Rev.

361

306

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“…Formation of Ga oxides results in two components on the low kinetic energy side of the GaAsrelated Ga 3d peak, shifted by -0.7 and -1.4 eV, whereas the multiple oxidation states of As result in up to five new components with shifts ranging between -0.7 and -4.5 eV [31,32]. The As oxides may also undergo partial photon-induced reduction, which complicates the interpretation of the As 3d spectra [29,33]. The smaller chemical shifts, fewer oxide components and higher stability of Ga oxides makes the Ga 3d spectra more suitable for exploring charging effects in the oxidized NWs.…”

Section: Oxidation Effects On the Conductivity Of Gaas Nwsmentioning

confidence: 99%

Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires

et al. 2010

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Contactless monitoring with photoelectron microspectroscopy of the surface potential along individual nanostructures, created by the X-ray nanoprobe, opens exciting possibilities to examine quantitatively size-and surface-chemistry-effects on the electrical transport of semiconductor nanowires (NWs). Implementing this novel approach-which combines surface chemical microanalysis with conductivity measurements-we explored the dependence of the electrical properties of undoped GaAs NWs on the NW width, temperature and surface chemistry. By following the evolution of the Ga 3d and As 3d core level spectra, we measured the positiondependent surface potential along the GaAs NWs as a function of NW diameter, decreasing from 120 to ~20 nm, and correlated the observed decrease of the conductivity with the monotonic reduction in the NW diameter from 120 to ~20 nm. Exposure of the GaAs NWs to oxygen ambient leads to a decrease in their conductivity by up to a factor of 10, attributed to the significant decrease in the carrier density associated with the formation of an oxide shell.

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“…14͒ and GaAs. [15][16][17] In the case of LAO on Si, we found that the LAO oxide consists of SiO 2 whose properties are similar to those of thermally grown SiO 2 . The study of the chemical composition of LAO oxides grown on GaAs revealed that it is mainly composed of Ga oxides with a small amount ͑10%͒ of As oxides located in the topmost layers of the LAO structures.…”

Section: Introductionmentioning

confidence: 69%

Evidence of material mixing during local anodic oxidation nanolithography

Mori

Lazzarino

Ercolani

et al. 2005

Journal of Applied Physics

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We investigate the chemical properties of nanostructures fabricated by local anodic oxidation (LAO) on epitaxial GaAs∕AlAs∕GaAs layers. We find evidence for the presence of Al compounds located in the topmost surface layers of the LAO structures. Our results cannot be explained within the framework of the commonly accepted mechanism that describes the growth of the LAO oxides in terms of diffusion of oxygen-rich ions through the growing oxide. A more general mechanism that explains our experimental findings is proposed.

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Desorption dynamics of oxide nanostructures fabricated by local anodic oxidation nanolithography

Cited by 16 publications

References 34 publications

Nano-chemistry and scanning probe nanolithographies

Nano-chemistry and scanning probe nanolithographies

Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires

Evidence of material mixing during local anodic oxidation nanolithography

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