Destructive heavy ion SEE investigation of 3 IGBT devices

McDonald, P.T.; Henson, B.G.; Stapor, W.J.; Harris, Marcus

doi:10.1109/redw.2000.896262

Cited by 6 publications

(2 citation statements)

References 2 publications

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“…The second broad category of ionizing radiation effects descends from the charge released by a (heavy) ion, which results in a Single Event Effect (SEE), that is, in a macroscopic electrical phenomenon produced by a single microscopic and highly localized event. From a phenomenological point of view, a huge variety of different phenomena are grouped under the SEE acronym, such as Single Event Upset (SEU) (39,40), Single Event Functional Interrupt (SEFI) (41,42), Multiple Bit Upset (MBU) (43), Single Event Gate Rupture (SEGR) (44,45), Single Event Transient (SET) (46), Single Event Latchtup (SEL) (47), and others. On a device physics perspective, the energy of the impinging ion is first transferred to lattice atoms and electrons, resulting in photons, phonons, and electron/hole pairs generation.…”

Section: Two Broad Classes Of Ionizing Radiation Effectsmentioning

confidence: 99%

Radiation Induced Charge Loss Mechanisms Across the Dielectrics of Floating Gate Flash Memories

2007

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One of the key factors permitting the extraordinary success offloating gate (FG) nonvolatile memories relies on the excellentinsulating properties of the dielectric layers surrounding theFG itself. Among other threats, ionizing radiation mayeffectively affect such insulating characteristics, leading to adegradation of the FG stored charge. Radiation effects have beentraditionally studied for niche applications such as the highenergy physics or the satellite industry. However, modernsemiconductor technologies are becoming more and more sensitiveto the deposition of small amounts of charge, such as thosegenerated by the byproducts of atmospheric neutrons, and FGmemories are in fact aggressively scaled following Moore's lawpredictions. Loss of information may derive from two broadcategories of phenomena, Total Ionizing Dose and Single EventEffect, whose actions on the FG dielectrics are reviewed in thiscontribution from the viewpoints of the prompt induced damageand long-term degradation effects, affecting the memoryretention capabilities

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Section: Two Broad Classes Of Ionizing Radiation Effectsmentioning

confidence: 99%

Radiation Induced Charge Loss Mechanisms Across the Dielectrics of Floating Gate Flash Memories

2007

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“…A heavy ion is able to induce latch‐up contrarily to MOSFET for which the triggering of the inherent parasitic transistor is not sufficient to induce a SEB: the avalanche conditions are necessary in this case. Single‐event gate rupture (SEGR) and SEB testing have been carried out by McDonald , et al [10] on three types of commercial 600–1200 V planar IGBTs. These devices are all sensitive to SEB and SEGR, but measurements at a reduced V CE value from 330 to 270 V indicated a significant reduction in both measured SEB/SEGR sensitivity, allowing their use for space applications.…”

Section: Introductionmentioning

confidence: 99%

Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors

Zerarka

Austin

Morancho

et al. 2014

IET Circuits, Devices & Systems

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Power metal-oxide semiconductor field effect transistors (MOSFETs) are more and more used in atmospheric and space applications. Thus, it is essential to study the influence of the natural radiation environment on the electrical behaviour of vertical double-diffused metal-oxide semiconductor (VDMOS) and super-junction (SJ) MOSFETs. Two-dimensional numerical simulations are performed to define the sensitive volume and triggering criteria of single-event burnout (SEB) for VDMOS and SJ MOSFETs for different configurations of ionising tracks. The analysis of the results allows a better understanding of the SEB mechanism in each structure and allows the behaviour and robustness comparison for these two technologies under heavy-ion irradiation.

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Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour

Tala-Ighil¹,

Oukaour²,

Gualous³

et al. 2011

Microelectronics Reliability

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Destructive heavy ion SEE investigation of 3 IGBT devices

Cited by 6 publications

References 2 publications

Radiation Induced Charge Loss Mechanisms Across the Dielectrics of Floating Gate Flash Memories

Radiation Induced Charge Loss Mechanisms Across the Dielectrics of Floating Gate Flash Memories

Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors

Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour

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