Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors

Zerarka, Moustafa; Austin, Patrick; Morancho, Frédéric; Isoird, Karine; Arbess, Houssam; Tasselli, Josiane

doi:10.1049/iet-cds.2013.0211

Cited by 10 publications

(2 citation statements)

References 24 publications

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“…Thus, the generated currents lead to thermal runaway and burnout. Furthermore, the peak electric field is directly proportional to the impact ionisation coefficient, which is related to the SEB sensitivity [23,24]. Hence, the reduction of the peak electric field will improve the SEB performance [25].…”

Section: Seb Simulation Results and Discussionmentioning

confidence: 99%

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Krishnamurthy

Kannan

Hussin

2020

Mater. Res. Express

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This study proposes the High-κ dielectric Trench Shielded power UMOSFET (HK TS-UMOSFET) to be assessed using the two-dimensional numerical simulations. The simulations are employed to evaluate HK TS-UMOSFETs susceptibility to single-event burnout (SEB) mechanism. Based on the findings, the influence of alternative high permittivity gate dielectrics to silicon dioxide (SiO 2 ) in TS-UMOSFET was discussed. Furthermore, in order to improve the performance of the device, its electrical behaviour was simulated with several high-κ dielectrics including Al 2 O 3 , Si 3 N 4 and Aluminium Nitride (AlN). When heavy ions strike the sensitive areas of the device, the electric field distribution and SEB threshold values were extracted. Based on the values yielded, (AlN) was identified as a promising high-κ material to achieve SEB-hardened TS-UMOSFET compared to the other highκ dielectrics. In conclusion, with (AlN), the HK TS-UMOSFET offers a high SEB tolerance and improved electrical characteristics.

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Section: Seb Simulation Results and Discussionmentioning

confidence: 99%

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Krishnamurthy

Kannan

Hussin

2020

Mater. Res. Express

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“…Ikeda et al [100] later showed experimentally that an SJ offered no improvement to SEB tolerance over a VDMOSFET. Further simulation and experimental studies on Si SJ MOSFETs showed there was no inherent advantage in SEE tolerance [101][102][103][104][105]. More recently, it has been demonstrated that SJ theory can be effective for SiC power MOSFETs [106], and the first SiC SJ MOSFET was demonstrated in [107] at the 2016 ESCRM.…”

Section: Baseline Superjunction Mosfet Seb Performancementioning

confidence: 99%

A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs

Grome,

2024

Electronics

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Radiation hardening of power MOSFETs (metal oxide semiconductor field effect transistors) is of the highest priority for sustaining high-power systems in the space radiation environment. Silicon carbide (SiC)-based power electronics are being investigated as a strong alternative for high power spaceborne power electronic systems. SiC MOSFETs have been shown to be most prone to single-event burnout (SEB) from space radiation. The current knowledge of SiC MOSFET device degradation and failure mechanisms are reviewed in this paper. Additionally, the viability of radiation tolerant SiC MOSFET designs and the modeling methods of SEB phenomena are evaluated. A merit system is proposed to consider the performance of radiation tolerance and nominal electrical performance. Criteria needed for high-fidelity SEB simulations are also reviewed. This paper stands as a necessary analytical review to intercede the development of radiation-hardened power devices for space and extreme environment applications.

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Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation

Chen

Wang

et al. 2017

J Electron Test

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Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors

Cited by 10 publications

References 24 publications

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation

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