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Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

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The rapid growth of the advanced technologies in power electronics system gives a challenge to the electronic device to sustain with the modern technologies nowadays. The challenges are also including the place where the system was installed for example the application in the harsh environment. Harsh environment application requires an electronic device deals with radiation pollution. Hence, the electronic device will suffer from this phenomenon and make the whole system to malfunction and break down. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is one type of electronic device that is the most broadly for high voltage and high switching speed application. The aim of this paper is to studies the photon radiation effect toward the Power MOSFET performance. The study focus on the changing of the electrical characteristics of the device after radiated with photon radiation. Process simulation and Device simulation tools in Sentaurus Synopsys Software used for the research to validate all the theory.