Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

Abstract

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

Application of the Jaya algorithm to solve the optimal reliability allocation for reduction oxygen supply system of a spacecraft

“…Consider a ROSS of a spacecraft consisting of elements connected reliability [15], [81]- [84], the following notes are used: -0 ≤ Ri ≤ 1 is the element reliability i -Ci(Qi) is the cost of the element i -𝐶(𝑄 1 , … , 𝑄 𝑛 ) = ∑ 𝑎 𝑖 𝐶 𝑖 (𝑄 𝑖 ) 𝑛 𝑖=1 the system's total cost, where ai > 0 -Q i : is unreliability -Qs: is the unreliability of the system -QG: is the unreliability goal of the system…”

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

“…However, SiC MOSFETs will be affected when working in space by TID due to radiation-induced trapped charges in the gate oxide (GOX), which in turn leads to their static and dynamic characteristic variations [4]. Currently, most of the published literature focuses on the TID effect on the static characteristics of SiC MOSFET power devices, and fewer published papers focus on the TID effects on the dynamic characteristics of SiC MOSFET power devices [5][6][7][8][9]. Only few papers have studied the TID effects on the dynamic characteristics of SiC MOSFET power devices, including switching characteristics [9,10].…”

Thermal annealing effects on the electrical characteristics of alpha particles irradiated MIS device AuTa2O5GaAs

“…The effects of thermal annealing and radiation, including neutrons, protons, alpha particles, beta, gamma, and X-rays, on the electrical, dynamic, structural, and thermal stability of different MIS and MOSFETs devices have been investigated in several studies [8,[14][15][16][17][18][19][20]. This study examines the influence of thermal annealing on the electrical characteristics and thermal stability of MIS devices made of AuTa 2 O 5 GaAs that have been annealed following irradiation with alpha particles of varying energies.…”