Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through $\hbox{SiO}_{2}$ Layers Into 4H-SiC

Mochizuki, Kazuhiro; Someya, T.; Takahama, T.; Onose, H; Yokoyama, N.

doi:10.1109/ted.2008.926631

Cited by 14 publications

(8 citation statements)

References 17 publications

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“…To understand the influence of the implantation energy sequence and the surface SiO 2 layer on channeling, BCA simulation of single-energy aluminum implantations into 4H-SiC were carried out, and the parameters of the dual Pearson model were fitted to the simulated data (Mochizuki et al, 2008). Concentration profiles of aluminum implanted with and without the SiO 2 layer are shown in Fig.…”

Section: (D) Discussionmentioning

confidence: 99%

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

Mochizuki¹

2011

Properties and Applications of Silicon Carbide

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Section: (D) Discussionmentioning

confidence: 99%

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

Mochizuki¹

2011

Properties and Applications of Silicon Carbide

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“…Note that the sequence of multiple-energy aluminum implantations into 4H-SiC has an influence on aluminumion channeling [13]. An analytical model based on two-dimensional Monte Carlo simulation of aluminum implantation in an increasing energy order was previously proposed [4].…”

Section: Experimental Conditions For Fabricating the Reported Ffr-ter...mentioning

confidence: 99%

“…In the case of 4H-SiC junction-barrier Schottky diodes, on the other hand, twodimensional Monte-Carlo simulation of aluminum implantation started from medium energy (95 keV) [11] because the diodes were experimentally fabricated by using this energy sequence starting from medium energy. In contrast, in this study, decreasing energy order was employed to minimize the non-uniformity caused by the aluminum-ion channeling [13].…”

Section: Experimental Conditions For Fabricating the Reported Ffr-ter...mentioning

confidence: 99%

A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates

Mochizuki

Okino

Matsushima

et al. 2015

IEEE J. Electron Devices Soc.

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A commercial-simulator-based numerical-analysis methodology for 4H-SiC power devices formed on misoriented (0001) substrates is proposed and applied for analyzing avalanche breakdown of floating-field-ring-terminated p-n diodes. Due to the inexpedience of a fixed orientation of the (0001) surface in current commercial device simulators, 4H-SiC (0001) surface is etched to form a miscut to separate the known effects of asymmetric nature of impact ionization and asymmetric aluminum concentration contours. 2-D process simulation of etching a 4H-SiC (0001) surface to expose a sloped surface, patterning the sloped surface with a mask, vertically implanting aluminum ions into the masked surface, removing the mask, and forming electrodes and a SiO 2 passivation film was carried out. This process simulation revealed asymmetric lateral straggling of implanted aluminum acceptors. The subsequent device simulation, which assumed fixed charge at the SiO 2 /4H-SiC interface, revealed asymmetric avalanche breakdown voltage in the misoriented direction and the opposite direction. This asymmetric breakdown qualitatively explains the previously reported nonuniform luminescence at breakdown. The proposed methodology is considered to be applicable to other power devices with other termination structures formed on misoriented 4H-SiC (0001) substrates.

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“…Misorienting a 4H-SiC (0001) substrate is indispensable for step-flow epitaxial growth of 4H-SiC [8]. Aluminum acceptors vertically implanted into a misoriented substrate should thus have asymmetric profiles due to the negligible diffusion of aluminum [9]- [13]. Such asymmetric acceptor profiles are considered to cause the non-uniform avalanche multiplication in 4H-SiC 4 • -off (0001) p-n diodes terminated with a conventional concentric FFR [7].…”

Section: Introductionmentioning

confidence: 99%

Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p–n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring

Mochizuki

Kameshiro

Matsushima

et al. 2015

IEEE J. Electron Devices Soc.

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Conventional floating-field rings, which are used to reduce the peak electric field at the periphery of power devices, cause nonuniform avalanche multiplication when applied to planar junctions formed on 4H-SiC substrates misoriented from (0001) toward [1120]. Accordingly, a novel asymmetrically spaced floating-field ring (AS-FFR) was applied to 4H-SiC 4 • -off (0001) p-n diodes and found to be effective against such nonuniform avalanche multiplication; that is, luminescence at breakdown was nearly uniform when the spacing between the edge of the anode and the inner edge of the AS-FFR was 2.0 μm in the [1 120] direction and 1.5 μm in the [1120] direction. This result should contribute to exploring the possibility of 4H-SiC power devices with higher avalanche ruggedness.INDEX TERMS Aluminum, ion implantation, power semiconductor devices, silicon compounds.

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Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through $\hbox{SiO}_{2}$ Layers Into 4H-SiC

Cited by 14 publications

References 17 publications

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates

Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p–n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring

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