Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Stumpf, F. B.; Quba, A. A. Abu; Singer, Peter; Rumler, Maximilian; Cherkashin, Nikolay; Schamm-Chardon, Sylvie; Cours, Robin; Rommel, Mathias

doi:10.1063/1.5022558

Cited by 9 publications

(4 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In contrast, a study of nanoindentation on SiC coating (59-μm thick) [27] showed an increased hardness and elastic modulus after irradiation, which was attributed to the irradiation-induced point defects that impeded the movement of dislocations. In this study, the observed behaviour at lower loads (1 to 3 mN) was most likely due to Ga ion implantation on the surface [28,29], which hardened the surface layer of the material by obstructing dislocation movement.…”

Section: Lower Load Levelmentioning

confidence: 70%

Nanoscale investigation of deformation characteristics in a polycrystalline silicon carbide

et al. 2019

View full text Add to dashboard Cite

In this paper, we study the mechanical behaviour of silicon carbide at the nanoscale, with a focus on the effects of grain orientation and high-dose irradiation. Grain orientation effect was studied through nanoindentation with the aid of scanning electron microscopy (SEM) and EBSD (electron backscatter diffraction) analyses. Mechanical properties such as hardness, elastic modulus and fracture toughness were assessed for different grain orientations. Increased plasticity and fracture toughness were observed during indentations on crystallographic planes which favour dislocation movement. In addition, for SiC subjected to irradiation, increases in hardness and embrittlement were observed in nanoindentations at lower imposed loads, whereas a decrease in hardness and an increase in toughness were obtained in nanoindentations at higher loads. Transmission electron microscopy (TEM) analyses revealed that the mechanical response observed at a shallow indentation depth was due to Ga ion implantation, which hardened and embrittled the surface layer of the material. With an increased indentation depth, irradiationinduced amorphization led to a decrease in hardness and an increase in fracture toughness of the material.

show abstract

Section: Lower Load Levelmentioning

confidence: 70%

Nanoscale investigation of deformation characteristics in a polycrystalline silicon carbide

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Phase transformation during or after micro/nano-machining has been widely reported, including micro/nano-cutting [ 67 ], micro/nano-indentation [ 4 ], micro/nano-scratching [ 5 ], Focused Ion Beam (FIB) machining [ 68 ] and so on. Phase transformation characterization and identification is of great significance for understanding material removal mechanism.…”

Section: Raman Spectroscopy Characterization In Micro/nano-machinimentioning

confidence: 99%

Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining

Song

et al. 2018

Micromachines

Self Cite

134

View full text Add to dashboard Cite

The defects and subsurface damages induced by crystal growth and micro/nano-machining have a significant impact on the functional performance of machined products. Raman spectroscopy is an efficient, powerful, and non-destructive testing method to characterize these defects and subsurface damages. This paper aims to review the fundamentals and applications of Raman spectroscopy on the characterization of defects and subsurface damages in micro/nano-machining. Firstly, the principle and several critical parameters (such as penetration depth, laser spot size, and so on) involved in the Raman characterization are introduced. Then, the mechanism of Raman spectroscopy for detection of defects and subsurface damages is discussed. The Raman spectroscopy characterization of semiconductor materials’ stacking faults, phase transformation, and residual stress in micro/nano-machining is discussed in detail. Identification and characterization of phase transformation and stacking faults for Si and SiC is feasible using the information of new Raman bands. Based on the Raman band position shift and Raman intensity ratio, Raman spectroscopy can be used to quantitatively calculate the residual stress and the thickness of the subsurface damage layer of semiconductor materials. The Tip-Enhanced Raman Spectroscopy (TERS) technique is helpful to dramatically enhance the Raman scattering signal at weak damages and it is considered as a promising research field.

show abstract

“…The main reason is that the beam tails of the FIB significantly damage the area outside the intentionally implanted area. 41, 42 Moreover, the surface in the 2 and 4 regions might be covered with some re-deposition material induced by FIB implantation and sputtering. Rubanov et al 17 proved that the re-deposition material induced by FIB machining is amorphous.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

Rommel

et al. 2018

Journal of Micromanufacturing

View full text Add to dashboard Cite

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

show abstract

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Cited by 9 publications

References 33 publications

Nanoscale investigation of deformation characteristics in a polycrystalline silicon carbide

Nanoscale investigation of deformation characteristics in a polycrystalline silicon carbide

Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

Contact Info

Product

Resources

About