2017
DOI: 10.1109/tns.2016.2637935
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Detailed SET Measurement and Characterization of a 65 nm Bulk Technology

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Cited by 31 publications
(20 citation statements)
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“…In Figure 6, the measured cross section for transients is plotted as the function of LET. Compared with the case [6] reported at 65 nm process, the SET cross section is smaller in 28 nm process, which is due to the smaller sensitive volume. When LET is more than 13.4 MeV · cm 2 · mg −1 , the cross-section of 65 nm process is more than an order of magnitude larger than 28 nm process, because of the reduction in sensitive volume.…”
Section: Set Characterizationcontrasting
confidence: 62%
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“…In Figure 6, the measured cross section for transients is plotted as the function of LET. Compared with the case [6] reported at 65 nm process, the SET cross section is smaller in 28 nm process, which is due to the smaller sensitive volume. When LET is more than 13.4 MeV · cm 2 · mg −1 , the cross-section of 65 nm process is more than an order of magnitude larger than 28 nm process, because of the reduction in sensitive volume.…”
Section: Set Characterizationcontrasting
confidence: 62%
“…Experimental results show that the measurement threshold and resolution of this pulse measurement circuit are improved compared to similar measurement circuits in the 65 nm process, but still cannot fully contain pulses with smaller widths. Three types of measurement circuits are compared in Reference [6], the measurement structure which is called "Vernier" makes its resolution not directly limited by the combination gate delay, which should be a feasible solution in advanced technology.…”
Section: Discussionmentioning
confidence: 99%
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