2022
DOI: 10.1103/physrevlett.128.107701
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Detecting Induced p±ip Pairing at the Al-InAs Interface with a Quantum Microwave Circuit

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Cited by 17 publications
(58 citation statements)
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“…the Fermi momentum of the semiconductor. We note that the choice of ∆ and g n /g s corresponds to the experimentally relevant regime, as observed, e.g., in Al/InAs heterostructures 15,20 . In the following, we calculate the differential conductance and the Fano factor as a function of junction transparency Z, SOC strength λ, and Zeeman field V s , for different field orientations θ.…”
Section: Model Definitionmentioning
confidence: 74%
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“…the Fermi momentum of the semiconductor. We note that the choice of ∆ and g n /g s corresponds to the experimentally relevant regime, as observed, e.g., in Al/InAs heterostructures 15,20 . In the following, we calculate the differential conductance and the Fano factor as a function of junction transparency Z, SOC strength λ, and Zeeman field V s , for different field orientations θ.…”
Section: Model Definitionmentioning
confidence: 74%
“…1. The superconductor is assumed to be of conventional nature with spinsinglet s-wave pairing, while the semiconductor is noncentrosymmetric with a substantial Rashba SOC, as realized in, e.g., Al/InAs heterostructures 15,20 . The semiconductor is separated into two regions by a potential barrier at i x = 0, whose transparency can be controlled experimentally by applying gate voltages.…”
Section: Model Definitionmentioning
confidence: 99%
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