Detection capability of Actinic Blank Inspection tool

Suzuki, Tomohiro; Miyai, Hiroki; Takehisa, Kiwamu; Kusunose, Haruhiko; Watanabe, Hidehiro; Mori, Ikue

doi:10.1117/12.2197309

Cited by 8 publications

(7 citation statements)

References 3 publications

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“…In 2011, Lasertec started working with EIDEC and, in 2013, successfully developed an ABI prototype tool. 1,2,3 Demand for the prototype tool increased gradually with the adoption of EUV technology in the industry. Lasertec continued its own effort to develop a commercial ABI tool and finally released ABICS E120 in 2017.…”

Section: Tool Configuration 21 Development Historymentioning

confidence: 99%

Actinic blank inspection for high-NA EUV lithography

Suzuki,

Watanabe,

Sakuma

et al. 2023

Photomask Technology 2023

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Section: Tool Configuration 21 Development Historymentioning

confidence: 99%

Actinic blank inspection for high-NA EUV lithography

Suzuki,

Watanabe,

Sakuma

et al. 2023

Photomask Technology 2023

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“…EUV metrology sources with 13.5 nm (92 eV) wavelength are needed for EUV mask manufacturing at several stages, such as blank inspection, patterned mask inspection, mask review, final inspection, and pellicle inspection [1][2][3][4]. Future applications of such sources in a similar wavelength range may also involve applications other than EUV mask metrology, such as wafer inspection and mask substrate inspection [5].…”

Section: Introductionmentioning

confidence: 99%

A high-brightness accelerator-based EUV source for metrology applications

Ekinci

Garvey

Streun

et al. 2018

Photomask Technology 2018

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One of the challenges of actinic metrology tools for EUV lithography is the availability of light sources with high brightness, stability, and availability. In particular, actinic patterned mask inspection on EUV reticles is considered an essential tool for the EUV lithography ecosystem and it requires an EUV source of high brightness. We present the design of a compact and accelerator-based light source producing EUV radiation with high-brightness for actinic metrology applications in the semiconductor industry. Our design is based on the well-established components and design principles. The specifications required for actinic mask inspection is achieved using a short period undulator and 430 MeV electron energy. The concentric design of storage and booster rings enables stable operation with a relatively small footprint. This study shows the commercial viability of a compact and high-brightness EUV source with high stability and reliability and demonstrates its feasibility for actinic metrology applications.

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“…Defects embedded deep in the multilayer reflective coatings or on the mask substrate, are not accessible to a SEM or deep ultraviolet microscopy or defects on the patterned mask which are either elusive or falsely detected by these, make it neccessary for actinitic metrology solutions. 5 In the last decade, several tool development programs were carried out for actinic blank inspection, 6 aerial imaging 7,8 and repair of the patterned masks, 8 which are presently supporting EUV mask shops. A missing gap in the EUV mask ecosystem has been an actinic inspection tool for fast defect detection towards generating a full mask defect map.…”

Section: Introductionmentioning

confidence: 99%

Towards a stand-alone high-throughput EUV actinic photomask inspection tool: RESCAN

et al. 2017

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With extreme ultraviolet (EUV) lithography getting ready to enter high volume manufacturing, there is an imminent need to address EUV mask metrology infrastructure. Actinic defect inspection of patterned EUV photomasks has been identified as an essential step for mask qualification, but there is no commercial tool available right now. We address this gap with the RESCAN tool, a defect inspection platform being built at Paul Scherrer Institut (PSI), co-developed in collaboration with Nuflare Inc, Japan. RESCAN uses Scanning Scattering Contrast Microscopy (SSCM) and Scanning Coherent Diffraction Imaging (SCDI) for fast defect detection and fine defect localization. The development of a stand-alone tool based on these techniques relies on the availability of (1) a bright coherent EUV source with a small footprint and (2) a high frame-rate pixel detector with extended dynamic range and high quantum efficiency for EUV. We present two in-house projects at PSI addressing the development of these components: COSAMI and JUNGFRAU. COSAMI (COmpact Source for Actinic Mask Inspection), is a high-brightness EUV source optimized for EUV photons with a relatively small footprint. JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a silicon-based hybrid pixel detector, developed in house at PSI and prototyped for EUV. With a high frame rate and dynamic range at 13.5 nm, this sensor solution is an ideal candidate for the RESCAN platform. We believe that these ongoing source and sensor programs will pave the way towards a comprehensive solution for actinic patterned mask inspection bridging the gap of actinic defect detection and identification on EUV reticles.

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Detection capability of Actinic Blank Inspection tool

Cited by 8 publications

References 3 publications

Actinic blank inspection for high-NA EUV lithography

Actinic blank inspection for high-NA EUV lithography

A high-brightness accelerator-based EUV source for metrology applications

Towards a stand-alone high-throughput EUV actinic photomask inspection tool: RESCAN

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