Detection of CdS(Te) and ZnSe(Te) scintillation light with silicon photodiodes

Schotanus, P.; Dorenbos, P.; Ryzhikov, V. D.

doi:10.1109/23.159663

Cited by 45 publications

(23 citation statements)

References 5 publications

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“…The band gap of such semiconductors is an important parameter, which affects the energy resolution, ionization energy, dark current, and other scintillation characteristics. The first ZnSe-based xray and -ray detectors were developed in the 1960s, and, nowadays, the detectors are mainly based on ZnSe(Te) and ZnSe(Al) [2].…”

Section: Introductionmentioning

confidence: 99%

Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content

Trubaieva¹,

Lalayants²,

Chaika³

2018

Ukr. J. Phys.

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ZnS Se1− bulk crystals were grown by the Bridgman-Stockbarger method. The transmittance of different samples in the range from 67% to 56% at = 1100 nm (for 4-mm samples) indicates a high optical quality of the crystals. No new states were revealed at the sulfur incorporation, and the band gap depends on the composition. The optical band gap of ZnS Se1− bulk crystals varies from 2.59 to 2.78 eV for direct transitions and from 2.49 to 2.70 eV for indirect transitions. K e y w o r d s: ZnS Se1− bulk crystals, direct transitions, indirect transitions, band gap.

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Section: Introductionmentioning

confidence: 99%

Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content

Trubaieva¹,

Lalayants²,

Chaika³

2018

Ukr. J. Phys.

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“…Наличие этих свойств обеспечивает целесообразность их применения в томографии и дозиметрии, поскольку в этом случае решающим фактором оказывается сочетаемость с кремниевыми фотодиодами и малое послесве-чение. Размер детекторов -10×7×5 мм 3 [4,5]. Легирование ZnSe ионами переходных металлов (Cr, Fe, Co) открывает перспективу создания пе-рестраиваемых лазеров для спектрального диапазона 2-5 мкм.…”

Section: Introductionunclassified

Properties and optical application of polycrystalline zinc selenide obtained by physical vapor deposition

Алексеевич¹,

Львовна²

2015

Naučno-teh. vestn. inf. tehnol. meh. opt.

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“…However, the lifetime of these devices was insufficient for use of ZnSe in commercial applications. Meanwhile, attempts of using ZnSe as scintillator material have been quite successful [1][2][3]. ZnSe exhibits high radiation hardness, conversion efficiency, and low hygroscopicity, when compared with conventional scintillators like CsI(Tl), which are widely used in detectors for many low energy X-ray applications [1,4].…”

Section: Introductionmentioning

confidence: 99%

Luminescence study of ZnSe based scintillators in frequency domain

Vitta¹

2008

Lithuanian J. Phys.

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Photoluminescence of ZnSe-based scintillation crystals is studied. Photoluminescence intensities and spectra of isoelectronically doped ZnSe(Te), ZnSe(O), and ZnSe(O,Al) are compared. Frequency domain luminescence lifetime measurement technique was applied to study carrier dynamics at low density of nonequilibrium carriers, which is typical for operation of high-sensitivity ZnSe-based radiation detectors. Temperature-dependent competition between donor-acceptor-pair-type and exponential luminescence decay components was observed.

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Detection of CdS(Te) and ZnSe(Te) scintillation light with silicon photodiodes

Cited by 45 publications

References 5 publications

Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content

Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content

Properties and optical application of polycrystalline zinc selenide obtained by physical vapor deposition

Luminescence study of ZnSe based scintillators in frequency domain

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