Detection of stacking faults in 6H-SiC by Raman scattering

Nakashima, S.; Nakatake, Yasuhiro; Harima, Hiroshi; Katsuno, Masakazu; Ohtani, Noboru

doi:10.1063/1.1329629

Cited by 65 publications

(42 citation statements)

References 14 publications

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“…The G band originates from the stretching vibrations in the basal plane of ideal graphite, and a combination of D and G bands is generally regarded as an indication of polycrystalline graphitic structures [7]. The Raman spectrum also shows weak peaks at positions near 500 cm [12,13,14,15] . However for this sample the A 1 peak is very minute.…”

Section: Ruthenium Reaction With and Diffusion In 4h-sic And 6h-sic Umentioning

confidence: 99%

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Munthali

Theron

Auret

et al. 2014

Journal of Nuclear Materials

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A thin film of ruthenium(Ru) was deposited on n-type 4H-SiC and 6H-SiC by electron beam deposition technique so as to study interface reaction of ruthenium with silicon carbide at various annealing temperatures, and in two annealing environments namely vacuum and air. The Ru-4H-SiC and Ru-6H-SiC films were both annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000 o C, and the second set of samples were also annealed in air for temperatures ranging from 100 o C to 600 o C. After each annealing temperature, the films were analysed by Rutherford Backscattering spectrometry (RBS). Raman analysis and x-ray diffraction analysis were also used to analyse some of the samples. RBS analysis of 4H-SiC annealed in a vacuum showed evidence of formation of ruthenium silicide (Ru 2 Si 3 ) and diffusion of Ru into SiC starting from annealing temperature of 700 o C going upwards. In the case of Ru-6H-SiC annealed in a vacuum, RBS analysis showed formation of Ru 2 Si 3 at 600 o C, in addition to the diffusion of Ru into SiC at 800 o C . Raman analysis of the Ru-4H-SiC and Ru-6H-SiC samples that were annealed in a vacuum at 1000 o C showed clear D and G carbon peaks which was evidence of formation of graphite . As for the samples annealed in air ruthenium oxidation started at a temperature of 400 o C and diffusion of Ru into SiC commenced at temperatures of 500 o C for both Ru-4H-SiC and Ru-6H-SiC. X-ray diffraction analysis of samples annealed in air at 600 o C showed evidence of formation of ruthenium silicide in both 4H and 6H-SiC but this was not corroborated by RBS analysis.

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Section: Ruthenium Reaction With and Diffusion In 4h-sic And 6h-sic Umentioning

confidence: 99%

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Munthali

Theron

Auret

et al. 2014

Journal of Nuclear Materials

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“…Usually, lasers are used as monochromatic excitation sources and the so-called Raman shift, i.e., the energy loss (or gain) of the scattered light, is given. Now, Raman spectroscopy has been applied to SiC material for characterizations of polytypes [6][7][8] , stacking faults 9 , stress 10 and doping 7,11,12 . In addition, it also has been employed to SiC crystals for investigating the properties in the vicinity and in the center of micropipes 13 .…”

Section: Introductionmentioning

confidence: 99%

Effect of impurities on the Raman scattering of 6H-SiC crystals

Lin

Chen

et al. 2012

Mat. Res.

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Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al-and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.

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“…A broad peak appearing at lower frequency side of the FTO (1/2) band (curves (c), (d) and (e)) is possibly a TO mode induced by stacking faults. 7 Relatively sharp band at 798 cm −1 was attributed to TO (E 1 ) mode induced by mis-oriented (0001) surface. In addition, the TO (A 1 ) mode was also observed at some positions (curve (c)), possibly due to miss-oriented (0001) surface.…”

Section: Raman Spectra Of Damaged Layer Induced By Scratchingmentioning

confidence: 99%

“…For some positions in scratching grooves, the shift reached about 1-2 cm −1 , and the asymmetry and broadening were large enough to be identified by the glance. The origin of the shift and asymmetry in such amounts may be stacking faults 7 and/or residual strain. According to Liu and Vohra, 8 the ratio of Raman shift to stress was 3.1 cm −1 /GPa for hexagonal SiC.…”

Section: Raman Spectra Of Damaged Layer Induced By Scratchingmentioning

confidence: 99%

Raman characterization of damaged layers of 4H-SiC induced by scratching

et al. 2016

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Recent development of device fabrication of SiC is awaiting detailed study of the machining of the surfaces. We scratched 4H-SiC surfaces with a sliding microindenter made of a SiC chip, and characterized machining affected layers by micro-Raman spectroscopy. The results of the Raman measurement of the scratching grooves revealed that there were residual stress, defects, and stacking faults. Furthermore, with heavy scratching load, we found clusters of amorphous SiC, Si, amorphous carbon, and graphite in the scratching grooves. Analysis of the Raman spectra showed that SiC amorphization occurs first and surface graphitization (carbonization) is subsequently generated through the phase transformation of SiC. We expect that the Raman characterization of machined surfaces provides information on the machining mechanism for compound semiconductors.

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Detection of stacking faults in 6H-SiC by Raman scattering

Cited by 65 publications

References 14 publications

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Effect of impurities on the Raman scattering of 6H-SiC crystals

Raman characterization of damaged layers of 4H-SiC induced by scratching

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