2011
DOI: 10.1002/pssc.201001171
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Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors

Abstract: Real time detection of vitellogenin in largemouth bass serum was demonstrated using AlGaN/GaN HEMTs. Anti‐vitellogenin antibodies were chemically anchored to the gold‐coated gate area of the HEMT by thioglycolic acid. The potential difference that occurred from the vitellogenin antigen/antibody interaction induced a drain current change. The sensor was able to detect as low as 4 µg/mL Vtg. Successful detection in serum samples shows that HEMTs have the potential to be used as biological sensors in real‐world a… Show more

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Cited by 5 publications
(4 citation statements)
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“…Once again, the high surface area of nanowires provides an ideal approach for enzymatic detection of biochemically important substances [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30].…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Once again, the high surface area of nanowires provides an ideal approach for enzymatic detection of biochemically important substances [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30].…”
Section: Discussionmentioning
confidence: 99%
“…There is also interest in applying these to biomarker detection [21][22][23][24][25][26][27][28][29][30].…”
Section: Introductionmentioning
confidence: 99%
“…An overlooked potential application of the GaN HEMT structure is sensors (Pearton et al , 2010;Chu et al, 2011;Lo et al , 2011Lo et al , , 2012. The high electron sheet carrier concentration of nitride HEMTs is induced by piezoelectric polarization of the strained AlGaN layer in the hetero-junction structure of the AlGaN/GaN HEMT and the spontaneous polarization is considerable in wurtzite III-nitrides.…”
Section: © Woodhead Publishing Limited 2013mentioning
confidence: 99%
“…Much of this work revolves around bio-functionalized AlGaN/GaN high electron mobility transistors (HEMTs), due to the excellent sensing characteristics from the high-density electron channel located near surface (∼25 nm). This type of sensor platform has been used extensively for a wide variety of bio-sensing applications, [44][45][46][47][48][49][50][51][52][53] but suffers from a number of disadvantages, chiefly the high cost of HEMT devices. For protein sensing, one of the major concerns can be the high ionicity of the test solution (secretions/blood/serum).…”
Section: Functionalized Semiconductor Sensorsmentioning
confidence: 99%