Detection of β-particles, conversion electrons and γ-rays with silicon planar detectors

Sueva, D.; Spassov, V.; Chikov, N.; Ivanov, I.

doi:10.1016/0969-8043(94)90111-2

Cited by 7 publications

(1 citation statement)

References 11 publications

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“…Work has also been reported characterizing Si depleted p channel field effect transistors for the detection of β À particles from 3 H and 14 C β À particle sources (Ulrici et al, 2005). Si hybrid pixel detectors (Bertolucci et al, 1996), Si monolithic active pixel detectors (Deptuch, 2005), and Si p + -i-n + photodiodes (Vapirev et al, 1994) have all been investigated for electron detection. However, Si detectors suffer from high intrinsic carrier concentration at a given temperature due to their relative narrow bandgap (1.12 eV; Neudeck et al, 2002).…”

Section: 1029/2018ja025687mentioning

confidence: 99%

GaAs Spectrometer for Planetary Electron Spectroscopy

et al. 2018

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Work toward producing a radiation‐hard and high temperature tolerant direct detection electron spectrometer is reported. The motivation is to develop a low‐mass, low‐volume, low‐power, multimission capable instrument for future space science missions. The resultant prototype electron spectrometer employed a GaAs p+‐i‐n+ mesa photodiode (10 μm i layer thickness; 200 μm diameter) and a custom‐made charge‐sensitive preamplifier. The GaAs detector was initially electrically characterized as a function of temperature. The detector‐preamplifier assembly was then investigated for its utility in electron spectroscopy across the temperature range 100 to 20 °C using a laboratory 63Ni radioisotope β− particle source (end point energy = 66 keV). Monte Carlo simulations using the computer program CASINO were conducted and showed that the spectrometer had a quantum detection efficiency which increased with increasing electron energy up to 70 keV; a quantum detection efficiency of 73% was calculated. The accumulated 63Ni β− particle spectra together with CASINO simulations of the detected spectra showed that the GaAs based spectrometer could be used for counting electrons and measuring the energy deposited per electron in the detector's active region (i layer). The development of a GaAs electron spectrometer of this type may find use in future space missions to environments of intense radiation (such as at the surface of Europa for investigation of electron‐driven radiolysis of ice) and high temperature (such as at Mercury, and comets passing close to the Sun).

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