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One-and two-dimensional position sensitive detectors based on an ITO-pSi structure have been fabricated and studied. The experimentally measured linear dependence between the photovoltage response and the light spot position is explained by a model in which the electric field in silicon in the lateral direction (E Si ) is assumed to be constant. It has been shown that E Si is inversely proportional to the electron diffusion length. Using the experimental data the electron diffusion length is estimated to be about 1 cm.

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