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A study is presented of a-Si:H films prepared by homogeneous chemical vapour deposition (HOMOCVO). a-Si:H is known as a material which is rather stable against degradation by light. The effect of deposition conditions on the parameters characterizing the structural and electronic properties of the films is studied, and two general cases of constant and variable gas-phase conditions were considered.The obtained data suggest that the optoelectronic properties of HOMOCVO a-Si:H are not strongly related to the structural parameters characterizing the film structure on a large scale and a certain decrease in the density and homogeneity of the a-Si:H films does not lead to their deterioration.

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