Determination de la composition a fusion congruente de semiconducteurs binaires par analyse thermique differentielle

Offergeld, G.; Cakenberghe, J. Van

doi:10.1016/0022-3697(59)90232-x

Cited by 76 publications

(18 citation statements)

References 3 publications

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“…Our consideration is based on the following points. The single crystals of Bi 2 Se 3 prepared from stoichiometric melt show an excess of bismuth over the stoichiometric composition [12]. According to [13] this is the reason why the crystal matrix contains negatively charged antisite (AS) defects of bismuth atoms on selenium sites ] is given by the difference of the concentration of both native defects, i.e.…”

Section: Resultsmentioning

confidence: 99%

Thermoelectric properties of Tl‐doped Bi₂Se₃ single crystals

Janíček

Drašar²,

Beneš

et al. 2009

Cryst. Res. Technol.

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The single crystals of the ternary system based on Bi 2-x Tl x Se 3 (nominaly x = 0.0-0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity σ ⊥c , Hall coefficient R H (B||c), and Seebeck coefficient S(ΔT⊥c). The measurements indicate that by incorporating Tl in Bi 2 Se 3 one lowers the concentration of free electrons and enhances their mobility. This effect is explained in terms of the point defects in the crystal lattice -formation of substitutional defects thallium on the site of bismuth Tl Bi and the decrease of concentration of selenium vacancies +2 Se V . We also discuss the temperature dependence of the power factor σS 2 of the samples. Upon the thallium doping we observe a significant increase of the power factor compare to the parental Bi 2 Se 3 .

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Section: Resultsmentioning

confidence: 99%

Thermoelectric properties of Tl‐doped Bi₂Se₃ single crystals

Janíček

Drašar²,

Beneš

et al. 2009

Cryst. Res. Technol.

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“…A detailed analysis of the defect structure in A 2 V B 3 VI has led to the development of a model of native defects. 3,5,[8][9][10][11] The model is based on the following assumptions: [12][13][14] ( …”

Section: Nonstoichiometry and Defects In Crystals With Tetradymite-tymentioning

confidence: 99%

“…[3][4][5][6][7] The way in which the overstoichiometric atoms are incorporated into the crystal lattice, i.e., the formation of native defects, determines the type and character of the free charge carriers and consequently governs all related physical parameters. A detailed analysis of the defect structure in A 2 V B 3 VI has led to the development of a model of native defects.…”

Section: Nonstoichiometry and Defects In Crystals With Tetradymite-tymentioning

confidence: 99%

Doping and Defect Structure of Tetradymite-Type Crystals

Drašar

Lošťák

Uher

2009

Journal of Elec Materi

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Nonstoichiometry of tetradymite-type crystals A 2 V B 3 VI that are grown from stoichiometric melts leads to the formation of native defects in the crystal lattice (predominantly antisite defects, A B À1 and vacancies V B +2 in the anion sublattice). This paper summarizes the basic ideas concerning a point defect model in A 2 V B 3 VI crystals. It turns out that a variety of doping elements interact with the native defects. Such interactions alter the concentration of free charge carriers, affect the doping efficiency, and modify the transport properties. Detailed understanding of the defect structure in tetradymite-type crystals is very important as it impacts on the efficiency of these materials when used as active elements in thermoelectric coolers.

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“…Interpretation of n = f(x) dependence is evidence of the presence of negatively charged defects in crystals with low Sb content, however, it is impossible to distinguish between negatively charged A decrease in V Se concentration can be schematically described as in Eq. [15].…”

Section: ½13mentioning

confidence: 95%

“…[14] and [15] it is evident that the increase in Sb content causes a decrease in deficit of Se atoms in the mixed crystals. This effect is not surprising since Sb 2 Se 3 crystals exhibit a surplus of Se atoms.…”

Section: ½13mentioning

confidence: 97%