Determination of absorption coefficients and thermal conductivity of GaAlAs/GaAs heterostructure using a photothermal method

“…[48] and bowing parameters taken from Refs. [49][50][51][52][53][54]. Their temperature dependences and analogous expressions for α-Si, SiO 2 and copper may be found in Ref.…”

Section: Theoretical Modelmentioning

confidence: 84%

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

et al. 2013

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In the present paper, a comprehensive computer simulation is used to determine optimal structure of the InPbased GaInNAs quantum-well (QW) active region and to investigate a possibility of reaching room-temperature (RT) continuous-wave (CW) single-fundamental-mode 2.33-µm operation of vertical-cavity surface-emitting laser (VCSEL) with such an active region. From among various considered InP-based active regions, the one with the Ga 0.15 In 0.85 N 0.015 As 0.985 /Al 0.138 Ga 0.332 In 0.530 As QW, i.e. with barriers lattice matched to InP, seems to be optimal for the 2.33-µm VCSEL performance. Its QW material is chosen for the required long-wavelength emission whereas its barrier is expected to ensure promising laser performance at room and higher temperatures. The latter is mostly connected with the QW conduction band offset equal in the above active region to as much as 413 meV, which is much larger than those of its possible lattice matched to InP competitors, e.g. 276 meV for the Ga 0.47 In 0.53 As barrier and 346 meV for the Ga 0.327 In 0.673 As 0.71 P 0.29 one. Our simulation reveals that from among various considered structures, a VC-SEL with a 4-µm-diameter tunnel junction and two 6-nm Ga 0.15 In 0.85 N 0.015 As 0.985 /Al 0.138 Ga 0.332 In 0.530 As QWs exhibits the lowest calculated threshold current of 0.88 mA. Its promising RT CW performance suggests that it may represent a very interesting alternative to GaSb-based VCSELs.

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Determination of absorption coefficients and thermal conductivity of GaAlAs/GaAs heterostructure using a photothermal method

Cited by 27 publications

References 10 publications

Morphological and thermal properties of β-SnS2 sprayed thin films using Boubaker polynomials expansion

Morphological and thermal properties of β-SnS2 sprayed thin films using Boubaker polynomials expansion

Morphological and thermal properties of β-SnS2 crystals grown by spray pyrolysis technique

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

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