Determination of Boron Concentration in Doped Diamond Films

Abstract

The electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Fabrication and characterization of a corner architecture Schottky barrier diode structure

“…, a lightly boron doped layer is grown on the slab formed in step 2. As previously reported (), the reactor used for heavy boron doping shows a significant reactor memory effect for the deposition of lightly boron doped films. This leads to inconsistent results for lightly doped films, since the unintentional doping varies from run to run, depending on the recent reactor usage.…”

“…The reactor used for the heavily boron doped diamond deposition was previously described . For lightly boron doped deposition, the reactor memory‐effect, which causes unintentional doping in lightly doped samples grown in systems also used for heavy boron doping, was previously found to be a problem in this reactor (). To overcome this issue, a new MPACVD reactor of the same microwave resonant cavity and bell‐jar design was built that is dedicated for low‐level boron doping.…”

“…All of the samples were run with 3.75% methane in the hydrogen plasma feedgas, and the other deposition parameters are given in Table . Table also lists the approximate boron concentration, obtained by FTIR, using the calibration given by Collins and Williams (), using the method described previously ().…”

The effect of substrate temperature and growth rate on the doping efficiency of single crystal boron doped diamond

“…Several groups [1][2][3] have reported that a lower percentage of boron from the plasma feedgas is incorporated into the grown solid phase diamond as the boron to carbon ratio in the plasma feedgas increases. In our previous work [4] we saw higher doping efficiencies than what was predicted in the work of Achard et al [1,2], and we suggested that it might be due to the higher substrate temperatures during growth that we used in our growth processes. To better understand the role of substrate temperature during growth, a series of experiments that varied the growth temperature and boron to carbon feedgas ratio have been performed.…”