Fabrication and characterization of a corner architecture Schottky barrier diode structure

Abstract

The corner architecture Schottky barrier diode (SBD) structure is proposed as an alternative vertical architecture for the realization of high power, high temperature, single crystal diamond diodes. The lightly doped layer of the diode is grown in a direction perpendicular to the previous epitaxial growth of the heavily doped layer, to reduce the threading-type dislocations in the active region of the fabricated diodes. The first ever corner architecture SBD is fabricated and evaluated for diode performance. The fabrication steps are described, including homoepitaxial diamond films deposited at high and low doping levels. Depositions are performed in microwave plasma-assisted chemical vapor deposition (MPACVD) plasma disc bell-jar reactors, with feedgas mixtures including hydrogen, methane, and diborane

Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

“…However, they require the growth of thick heavily boron-doped diamond material which is poorly available and challenging to grow [12]. Alternatively a corner architecture was recently proposed for which a p+ layer with a limited thickness can be used [13].…”

Nuclear batteries: Current context and near‐term expectations

“…Even if both the vertical and quasi vertical configurations provide good performances, the manufacturing of heavily doped, free‐standing layers of diamond is rather troublesome. To surmount these difficulties has been proposed an alternative Schottky barrier diode configuration, the so‐called “corner” structure 62 …”

“…Scheme of a diamond‐based Schottky barrier diode in a corner configuration The p‐type B‐doped diamond layer (pale blue) contacts an intrinsic HPHT (high pressure‐high‐temperature) diamond crystal (yellow). (From Reference [62])…”

“…To surmount these difficulties has been proposed an alternative Schottky barrier diode configuration, the so-called "corner" structure. 62 A scheme of this device architecture, that combines the advantages of the vertical and quasi-vertical structures minimizing their drawbacks, is shown in Figure 7.…”

(Invited) Current Topics in Electronic Devices Based on Wide Band-Gap Semiconductors for Power Applications and Energy Efficiency

“…Electroluminescence was observed in the p-i-n diodes giving further proof to the presence of both electrons and holes in the device. Diamond Schottky diodes were also demonstrated with V BD > 1100V using a novel corner architecture Schottky barrier diode (SBD) structure where the lightly doped layer of the diode is grown in a direction perpendicular to the previous epitaxial growth of the heavily doped layer, to reduce the threading-type dislocations in the active region of the fabricated diodes (23).…”