Determination of channel temperature of AlGaN/GaN HEMT by electrical method

Feng, Shiwei; Hu, Peifeng; Zhang, Guangchen; Guo, Chunsheng; Xie, Xiaojun; Chen, Tangsheng

doi:10.1109/stherm.2010.5444296

Cited by 8 publications

(4 citation statements)

References 9 publications

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“…These devices are new, it is therefore very difficult to find papers dealing with their TSEPs. However Feng et al [65] measure the chip temperature of a GaN HEMT using the forward voltage under a low current of the gate-source AlGaN-GaN schottky diode. They obtain a sensitivity in the range -2 to -3 mV/°C.…”

Section: ) Sic Devicesmentioning

confidence: 99%

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Avenas

Dupont²,

Khatir³

2012

IEEE Trans. Power Electron.

454

202

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This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide band gap semi conductors is also discussed.

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Section: ) Sic Devicesmentioning

confidence: 99%

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Avenas

Dupont²,

Khatir³

2012

IEEE Trans. Power Electron.

454

202

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“…In [37], the use of the forward voltage (i.e., a TSEP) of an AlGaN/GaN Schottky junction has been able to obtain good linearity and the results have shown good accuracy. However, this approach cannot be used online, i.e., the measurements cannot be performed during the normal functioning of the device but only after it is shut down.…”

Section: Estimation Of the Junction Temperature And Thermal Resistanc...mentioning

confidence: 99%

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters

et al. 2023

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The thermal management of power converters is not only crucial for their own optimal operation and reliability, but also for the overall system in which they are operating. Reliability is a very serious aspect because power electronics systems are being increasingly widely adopted in mission-critical applications in the e-mobility sector, in smart grids, and other applications where safety and operational continuity are essential. The current trend towards miniaturization of power conversion systems and, consequently, towards high power density solutions is speeding up the diffusion of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). GaN HEMT-based high power density converters must be properly managed, making the estimation of the thermal characteristics of these devices essential. This paper proposes the use of some Thermo-Sensitive Electrical Parameters (TSEP) for a simple and effective thermal resistance evaluation. The primary advantages and limitations of these TSEPs have been critically analyzed. The analysis highlighted that the use of the gate-source voltage is the best approach. However, it requires direct access to the gate pin, which may not be available externally in some system-in-package solutions.

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“…[9] Another electrical method used the forward junction voltage for a given current as a TSP. [10,11] This is similar to the method used for measuring the junction temperature of GaAs MESFET (Gallium Arsenide Metal-Semiconductor Field-Effect-Transistor) devices. [12] It is convenient to use in situ electrical methods for transient thermal characterization, as they do not require direct visual access to the junction of power device.…”

Section: E19-002-2mentioning

confidence: 99%

“…[5] For Gallium Nitride High Electron Mobility Transistors (GaN HEMTs), there have been many research attempts for the measurement of the junction temperature. Optical methods such as infrared thermal imaging and micro Raman spectroscopy, [6,7] embedding a dedicated temperature sensor on a die, [8] and several electrical methods [9][10][11] have been introduced. Synchro-…”

Section: Introductionmentioning

confidence: 99%

Transient Thermal Characterization for GaN HEMTs with p-Type Gate

Hara

Funaki

2020

Transactions of The Japan Institute of Electronics Packaging

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This paper discusses a transient thermal testing approach for Gallium Nitride High Electron Mobility Transistor (GaN HEMT) with p-type gate. Conventional transient thermal characterization methods for Si (Silicon) based device have difficulties in characterizing GaN HEMTs. The non-ideal characteristics of such power devices make thermal characterization difficult. The proposed transient thermal characterization method for GaN HEMTs uses the knee voltage of PN junction in gate and source of GaN HEMT as a junction temperature sensor. The proposed method enables the acquisition of the time response of temperature with sufficient accuracy. The proposed method is validated on a commerciallyavailable GaN HEMT device.

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Determination of channel temperature of AlGaN/GaN HEMT by electrical method

Cited by 8 publications

References 9 publications

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters

Transient Thermal Characterization for GaN HEMTs with p-Type Gate

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