Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves

Zaumseil, P.; Winter, U. J.; Cembali, F.; Servidori, M.; Sourer, Z.

doi:10.1002/pssa.2211000110

Cited by 92 publications

(13 citation statements)

References 11 publications

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“…The tensile strain induced by EOR defects is estimated to be about 1 Â 10 À2 from X-ray analysis. [13][14][15] Using D 0 I ðt ¼ 0Þ=D I ¼ 28 from the present study and e EOR ¼ 1 Â 10 À2 leads to Q 0 % À30 eV per unit tensile strain from Eq. (27).…”

Section: B Enhanced Si Self-diffusion By Tensile Strain Originated Fmentioning

confidence: 68%

“…Experimental results of X-ray analysis show the presence of tensile strain at EOR defect regions. [13][14][15] This tensile strain at EOR defects can enhance B diffusion because theoretical calculations found that tensile strain enhances interstitial-mediated diffusion. 16 To the best of our knowledge, however, there have been no reports that show enhanced B diffusion at EOR defect regions although B diffusion in the presence of EOR defects has been extensively studied.…”

Section: Introductionmentioning

confidence: 99%

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Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Isoda

Uematsu

Itoh

2015

Journal of Applied Physics

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Si self-diffusion in the presence of end-of-range (EOR) defects is investigated using nat Si/ 28 Si isotope multilayers. The isotope multilayers were amorphized by Ge ion implantation, and then annealed at 800-950 C. The behavior of Si self-interstitials is investigated through the 30 Si selfdiffusion. The experimental 30 Si profiles show further enhancement of Si self-diffusion at the EOR defect region, in addition to the transient enhanced diffusion via excess Si self-interstitials by EOR defects. To explain this additional enhanced diffusion, we propose a model which takes into account enhanced diffusion by tensile strain originated from EOR defects. The calculation results based on this model have well reproduced the experimental 30 Si profiles. V

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Section: B Enhanced Si Self-diffusion By Tensile Strain Originated Fmentioning

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Isoda

Uematsu

Itoh

2015

Journal of Applied Physics

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“…While the in situ analysis of materials during thermal annealing is well consolidated in the PD and XRR fields (although often limited to the exploration of only phase transitions and interface evolution, respectively), the number of in situ material HRXRD characterizations is much lower, although HRXRD gives access to specific information for epitaxial layers (lattice parameters, film thickness, composition, strain state, relaxation degree, dislocation density etc.). However, since the pioneering papers of , Zaumseil et al (1987) and Fabbri et al (1989), the number of HRXRD works exploiting thermal annealing and performed either using synchrotron sources (Lowe et al, 1991;Clarke et al, 1991;Lee & Baik, 1999;Stephenson et al, 2003;Skuza et al, 2007;Meduň a et al, 2007;Adell et al, 2007) or laboratory sources (e.g. Bai et al, 2004;Adell et al, 2005;Guinebretiere et al, 2007) has increased progressively.…”

Section: Introductionmentioning

confidence: 99%

High-resolution X-ray diffractionin situstudy of very small complexes: the case of hydrogenated dilute nitrides

et al. 2008

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In this work it is demonstrated how in situ high-resolution X-ray diffraction (HRXRD), performed during thermal annealing and employing a conventional laboratory source, can be used to obtain information on the evolution kinetics of very small complexes formed in an epitaxial layer. HRXRD allows the measurement of changes in the lattice parameter of the layer (i.e. the layer strain) with different annealing strategies (by linear temperature ramp or isothermal annealing). On the basis of these data and using an appropriate model, the dissolution energy values of the complexes can be extracted. The underlying idea is that every type of complex present in the layer gives a specific lattice strain which varies under annealing, allowing their evolution to be traced accurately. As an example, this methodology is applied to the study of N-H complexes formed in hydrogen-irradiated GaAs 1Àx N x /GaAs layers.research papers

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“…Another widespread technique is X-ray diffraction (XRD). Being an interferometric technique, XRD is highly sensitive to the atomic displacement field within the crystal and numerical simulations of XRD data permit to retrieve the lattice strain consecutive to ion irradiation, as well as the level of disorder which is estimated through the determination of the so-called static Debye-Waller (DW) factor [7][8][9][10][11][12].…”

mentioning

confidence: 99%

Statistical Nature of Atomic Disorder in Irradiated Crystals

Boulle

Debelle

2016

Phys. Rev. Lett.

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Atomic disorder in irradiated materials is investigated by means of x-ray diffraction, using cubic SiC single crystals as a model material. It is shown that, besides the determination of depth-resolved strain and damage profiles, x-ray diffraction can be efficiently used to determine the probability density function (PDF) of the atomic displacements within the crystal. This task is achieved by analyzing the diffraction-order dependence of the damage profiles. We thereby demonstrate that atomic displacements undergo Lévy flights, with a displacement PDF exhibiting heavy tails [with a tail index in the γ=0.73-0.37 range, i.e., far from the commonly assumed Gaussian case (γ=2)]. It is further demonstrated that these heavy tails are crucial to account for the amorphization kinetics in SiC. From the retrieved displacement PDFs we introduce a dimensionless parameter f_{D}^{XRD} to quantify the disordering. f_{D}^{XRD} is found to be consistent with both independent measurements using ion channeling and with molecular dynamics calculations.

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Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves

Cited by 92 publications

References 11 publications

Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

High-resolution X-ray diffractionin situstudy of very small complexes: the case of hydrogenated dilute nitrides

Statistical Nature of Atomic Disorder in Irradiated Crystals

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