The influence of the lattice defects induced by silicon-ion implantation on the B, P, As, and Sb diffusivities is investigated after annealing between 700 and 900 °C. The nature and depth position of the residual implantation defects in undoped samples is determined by the analysis of the rocking curves obtained by triple-crystal x-ray diffraction and transmission electron microscopy. In particular, besides the interstitial dislocation loops and clusters below the original amorphous-crystal interface, the epitaxial regrowth of the amorphized silicon leaves a vacancy-rich surface layer and a deeper region enriched in interstitials. These regions correspond to those where Monte Carlo simulations of defect production foresee excess point defects. Accordingly, as the dopant is located in correspondence with the vacancy or interstitial clusters, different behaviors of anomalous diffusion are observed. In the deep region where an interstitial excess is present, B and P show marked enhanced diffusion, while only a small enhancement is exhibited by As and Sb. On the contrary, retarded diffusivity for B and light enhancement for As and Sb are observed in the surface layer. These different trends are consistent with the different accepted contributions of vacancies and interstitials to the diffusion mechanisms of the investigated dopants.

A theoretical description of the intensity distribution of triple crystal diffractometer measurements of parallel (+n, -n, +n) setting is presented. Based on this description the application of different collimator-analyzer arrangements is discussed. The intensity distribution near the reciprocal lattice point is calculated for the symmetrical (111) Bragg case reflection with CuK,radiation for five different collimator-analyzer arrangements with monolithic grooved crystals. The experimental comparison of these arrangements explains that it is necessary to use monolithic grooved crystals not only as collimator but also as analyzer to measure weak diffuse intensities with high resolution. Different collimator-analyzer combinations are used for the investigation of the diffuse scattering of Czochralski grown silicon single crystals of different diameter and of the damaged surface layer of a fine grinded silicon wafer.Eine theoretische Beschreibung der Intensitiitsverteilung von Dreikristalldiffraktometermessungen in paralleler (+n, -n, +n)-Anordnung wird vorgestellt. Darauf aufbauend werden die Anwendungsmoglichkeiten unterschiedlicher Kollimator-Analysator-Anordnungen diskutiert. Die Intensitiitsverteilung am reziproken Gitterpunkt wird im symmetrischen Bragg-Fall, (1 11)-Reflexion mit CuK,-Strahlung, fur funf verschiedene Kollimator-Analysator-Anordnungen mit monolithischen Grabenkristallen berechnet. Der experimentelle Vergleich dieser Anordnungen verdeutlicht, daD monolithische Grabenkristalle nicht nur als Kollimator, sondern auch als Analysator zur Messung schwacher, diffuser Intensitiiten mit hoher Auflosung notwendig sind. Unterschiedliche Kollimator-Analysator-Kombinationen werden fur die Untersuchung der diffusen Streuung von Czochralski-Silizium mit unterschiedlichem Durchmesser und der gestorten Oberfliiche einer feingeschliffenen Si-Scheibe verwendet.

No abstract

No abstract

P. ZAUMSEIL et a1. : Dislocation Loop Size and Density in Silicon 95 phys. stat. sol. (a) 100, 95 (1987) Subject classification: G1.70; 61.10; 55.11Instifut fkr ~~u l~l~i f e r p h~s~k der Akadernie der Wissenschaftm der BD R , Pmnkjurt ( 0 d e r ) l ) (a) and Consiglio Nazionale dellr Ricerdie, Istituto L A M E L , Bologna2) ( b )