Determination of Elastic Stiffness and Piezoelectric e- and d-Constants of Piezoelectric Ceramic from Ultrasonic Velocity and Dielectric Constant

Sasaki, Yukihiko; Ochiai, Tsutomu; Takéuchi, Yoshio; Hayashi, Shigeo

doi:10.1143/jjap.34.4122

Cited by 5 publications

(4 citation statements)

References 3 publications

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“…Moreover, the value is comparable with 0.402 nm of the a-axis of tetragonal phase of PZT (Zr/Ti = 0.5/ 0.5) thin film reported earlier. 43),44) Figure 10 shows the cross-sectional (a) HAADF-STEM image, strain maps of (b) the normal strain map along the out-of-plane direction, (c) the normal strain map along the in-plane direction, (d) the rigid rotation map, and (e) the pure shear strain map of the amorphous thin film. Figure 10 clearly illustrates no misfit dislocation in the interface layer because the interface layer is less than the unit cell thickness of 0.4 nm, which is less than the critical thickness of 1.3 nm for introducing dislocation half loops to form misfit dislocations.…”

Section: Interface Structure Between Amorphous Pzt Thin Films and Stomentioning

confidence: 99%

“…Generally, transition metal oxides show the pre-edge in the energy range of 530540 eV because of hybridization between the transition metal d-orbital and the oxygen 2p-orbital. 42), 43) Furthermore, hybridization occurs between the lead 6p-orbital and the oxygen 2p-orbital in the Pb-based perovskite ferroelectrics. 46)51) Peaks A and B respectively correspond to the hybridization of Ti3d-O2p and Pb6p-O2p.…”

Section: Local Structures Of Amorphous and Crystallized Pzt Thin Filmsmentioning

confidence: 99%

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Epitaxial growth mechanism of Pb(Zr,Ti)O3 thin films on SrTiO3 by chemical solution deposition via self-organized seed layer

Kiguchi

Shimizu

Shiraishi

et al. 2020

J. Ceram. Soc. Japan

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Using scanning transmission electron microscopy and electron energy loss spectroscopy, we have elucidated the local structure and the crystallization mechanism of amorphous phase PbZr x Ti 1¹x O 3 (PZT) (x = 0.3) thin films deposited on SrTiO 3 (STO) (001) single-crystal substrates by chemical solution deposition. The amorphous phase involves the short-range order of (Ti/Zr)O 6 octahedra and PbO, and then, they are connected with the residual carbon. During the pyrolysis process, the first unit cells of the film has already crystallized with cube-on-cube epitaxial relationship with the STO substrate. The filmsubstrate interface is coherent and atomically sharp between the first PbO layer and the substrate. In the crystallization process, this layer seems to act as a seed layer for PZT epitaxial film growth. It accelerates crystal growth as a nucleation site and simultaneously shrinks the film by combustion of the residual carbon and subsequent densification, affecting the local coordination structure in the amorphous phase. The self-organized seed layer in the pyrolyzed film appears to play an important role in the epitaxial growth.

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Section: Interface Structure Between Amorphous Pzt Thin Films and Stomentioning

confidence: 99%

Section: Local Structures Of Amorphous and Crystallized Pzt Thin Filmsmentioning

confidence: 99%

Epitaxial growth mechanism of Pb(Zr,Ti)O3 thin films on SrTiO3 by chemical solution deposition via self-organized seed layer

Kiguchi

Shimizu

Shiraishi

et al. 2020

J. Ceram. Soc. Japan

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“…The pulse-echo techniques are widely used for ultrasonic velocity measurements and elastic constant determination for various materials, such as PZT ceramics [1,2], PZN-PT single crystals [7,8], diamond, lanthanum aluminosilicate glasses, lanthanum gallogermanate glasses, triglycine sulfate single crystals, and other materials. In [2] the ultrasonic velocities and dielectric constants were measured along different directions in X-Z plane of PZT ceramics (poling direction is along Z-axis).…”

Section: Introductionmentioning

confidence: 99%

“…In [2] the ultrasonic velocities and dielectric constants were measured along different directions in X-Z plane of PZT ceramics (poling direction is along Z-axis). A complete set of the values of elastic stiffness constants and piezoelectric e il -and d ilconstants has been obtained by the least squares method from the wave velocities and dielectric constants.…”

Section: Introductionmentioning

confidence: 99%

Influence of electric field on the ultrasound velocity in PZT ceramics

2007

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The paper deals with the influence of the electric bias field on the ultrasound velocity of various samples of Pb (Zr x Ti 1−x )O 3 (PZT) ceramics. The ultrasonic velocities were measured on commercial types of PZT ceramics as APC 841, APC 850, and APC 856, at room temperature. The comparison of the ultrasound velocities dependence on electric bias field was made for poled/unpoled soft ceramics. The ultrasonic pulse-echo technique was used in our experiment. The ultrasonic system is based on Matec Instruments, Inc. modules. The time domain response was recorded and time of flight between echoes was directly measured by digital oscilloscope, type Agilent 54622D. The high bias field was applied on disk samples by the high voltage amplifier type Trek 610D, using a special setup and sample holder. The sound velocity was found to change drastically near the coercive field for a PZT ceramics, where the velocity of longitudinal waves decreases with an increasing field while the velocity of shear waves increases, which is caused by the change of the elastic anisotropy under influence of the depolarization field. The consequent change of the piezoelectric contribution to effective elastic constant decreases the velocity of longitudinal waves and at the same time increases the velocity of shear waves around the coercive field.

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Development of Piezoelectric Accelerometer of Charge-Shear Type Having Temperature-Independent Sensitivity

Ochiai¹

1998

Jpn. J. Appl. Phys.

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A piezoelectric accelerometer based on detecting piezoelectric charge Q 1 caused by shear strain S 5 has been developed, which consists of two piezoelectric elements made from a ferroelectric ceramic and one condenser element also made from a ferroelectric ceramic. Positive temperature dependence of dielectric constant of the former piezoelectric element (PbZr0.51Ti0.49O3 modified with 0.7 mol% Nb2O5) is compensated by negative dependence of the latter condenser element [Pb0.8La0.2(Zr0.4Ti0.6)0.95O3 or Pb0.7Sr0.2La0.1(Zr0.5Ti0.5)0.975O3] over a range of -50 to 300°C, with the result that sensitivity and its deviation are obtained to be 42×10-12 C/G and within 5%, respectively.

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Determination of Elastic Stiffness and Piezoelectric e- and d-Constants of Piezoelectric Ceramic from Ultrasonic Velocity and Dielectric Constant

Cited by 5 publications

References 3 publications

Epitaxial growth mechanism of Pb(Zr,Ti)O<sub>3</sub> thin films on SrTiO<sub>3</sub> by chemical solution deposition via self-organized seed layer

Epitaxial growth mechanism of Pb(Zr,Ti)O<sub>3</sub> thin films on SrTiO<sub>3</sub> by chemical solution deposition via self-organized seed layer

Influence of electric field on the ultrasound velocity in PZT ceramics

Development of Piezoelectric Accelerometer of Charge-Shear Type Having Temperature-Independent Sensitivity

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