Determination of electrical and optical parameters of Ga1−xInxAsySb1−y and Ga1−xAlxAsySb1−y thin layers grown on GaSb substrates by IR reflectivity

Mezerreg, A.; Llinarès, C.; Lazzari, J.–L.; Montaner, A.

doi:10.1016/0040-6090(92)90814-r

Cited by 9 publications

(6 citation statements)

References 26 publications

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“…The IR reflectivity spectra for Ga x In 1Àx As y Sb 1Ày /GaSb epilayers have been measured by Mezerreg et al [161] and Pickering [168]. The reststrahlen parameters obtained were presented in tabular form [161].…”

Section: (D) Gainassbmentioning

confidence: 99%

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Optical Properties

2009

Properties of Semiconductor Alloys

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The complex dielectric function «ðEÞ ¼ « 1 ðEÞ þ i« 2 ðEÞ ð 10:1Þcan be used to describe the optical properties of the medium at all photon energiesThe complex refractive index n Ã (E) can also be given bywhere n(E) is the ordinary (real) refractive index and k(E) is the extinction coefficient. From Equation (10.2), we obtain Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors Sadao Adachi

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Section: (D) Gainassbmentioning

confidence: 99%

“…The reststrahlen parameters obtained were presented in tabular form [161]. Studies on Ga x In 1Àx As y Sb 1Ày /InAs have also been undertaken by Pickering [168].…”

Section: (D) Gainassbmentioning

confidence: 99%

Optical Properties

2009

Properties of Semiconductor Alloys

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“…These materials exhibit a wide band gap, ranging from infrared (IR) to visible light, which is useful for applications in thermo-photovoltaic [3], optoelectronics [4] and high-speed devices [5]. Several works have been focused on the elaboration of binary, ternary and especially quaternary alloy epitaxial layers and then on the investigation of their optical and physico-electrical properties [6]. In A 1−x B x C y D 1−y alloys, the two compositions x and y can be modulated and each set of values (x, y) corresponds to an operating wavelength of a particular device [6].…”

Section: Introductionmentioning

confidence: 99%

“…Several works have been focused on the elaboration of binary, ternary and especially quaternary alloy epitaxial layers and then on the investigation of their optical and physico-electrical properties [6]. In A 1−x B x C y D 1−y alloys, the two compositions x and y can be modulated and each set of values (x, y) corresponds to an operating wavelength of a particular device [6]. The 3 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Jdidi¹,

Sfina²,

Nassrallah³

et al. 2011

Semicond. Sci. Technol.

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The authors report a two-color quantum well infrared photodetector at room temperature operating in the mid-and long-wavelength infrared detection. To this purpose, the band alignment is tailored and electronic properties are investigated for the proposed structure based on Ga 1−x In x As y Sb 1−y /GaSb and Al x Ga 1−x As y Sb 1−y /GaSb. As accurate knowledge of band offsets is required in device modeling, we have proceeded to theoretical investigations of the band offsets for pseudo-morphically strained and lattice-matched Ga 1−x In x As y Sb 1−y /GaSb and Al x Ga 1−x As y Sb 1−y /GaSb heterointerfaces in the whole range of alloy compositions 0 x, y 1. The carrier effective masses are deduced from the laws extracted from the k.p strain Hamiltonian laws. For the modeled heterostructure, the dark current of about 10 −1 A cm −2 at ambient temperature shows the high performance of this multi-color infrared photodetector around 5 and 12.5 μm wavelengths.

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“…G a l -,In,As, -$by quaternary alloys matched on GaSb substrate are grown by the conventional liquid phase epitaxy (LPE) [4] technique. IR reflectivity measurements have been already made on these quaternary alloys to determine other electrical and optical parameters by Mezerreg et al [5]. Photodetector devices used in this work are Gal -,In,Sb,/Ga, -,In,Sb, homojunctions grown onto GaSb, substrate, Gal _,In,Sb,/GaSb, ternary heterojunction, and GaSbdGa, -,In,As -,Sb,,/GaSb, quaternary heterojunction.…”

Section: Introductionmentioning

confidence: 99%

Calculated and measured spectral responses in near-infrared of III–V photodetectors based on Ga, In, and Sb

Mbow¹,

Mezerreg²,

Rezzoug³

et al. 1994

Phys. Stat. Sol. (a)

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Spectral response measures are particularly important for the characterization of photodetector devices operating at the wavelength 2.55 μm. For each sample elaborated in our laboratory (C.E.M.) and tested experimentally by spectral response, an appropriate theoretical model is proposed to calculate the quantum efficiency. The experimental and theoretical curves are compared by simulation to determine the parameters which are not available experimentally (diffusion length, recombination velocity at the surface, etc.). The modeling of the different devices permits to analyse the situation on the surface and in the bulk. Presented are theoretical models and results after spectral response simulation of Ga1–xInxSbn/Ga1–xInxSbp homojunction grown onto GaSbp substrate, Ga1–xInxSbp/GaSbn ternary heterojunction (x is the indium concentration), and GaSbp/Ga1–xInxAs1–ySbyp/GaSbn (y is the antimony concentration) quaternary heterojunction.

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Determination of electrical and optical parameters of Ga1−xInxAsySb1−y and Ga1−xAlxAsySb1−y thin layers grown on GaSb substrates by IR reflectivity

Cited by 9 publications

References 26 publications

Optical Properties

Optical Properties

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Calculated and measured spectral responses in near-infrared of III–V photodetectors based on Ga, In, and Sb

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