Determination of electrical transport properties using a novel magnetic field-dependent Hall technique

Abstract

A novel technique is presented for interpreting magnetic field-dependent Hall data at magnetic fields below the range at which Shubnikov–de Haas oscillations occur. The technique generates a ‘‘mobility spectrum’’ in which the maximum carrier density or maximum conductivity is determined as a continuous function of mobility. Examples of the use of the technique with synthetic data as well as data from HgCdTe and GaAs/AlGaAs samples are provided. Other uses of the procedure, including measurement of Fermi surface shapes and direct measurement of the distribution of relaxation times, are discussed.

Electron mobility in Si delta doped GaAs

“…In Table 1 we present the results of the transport mobility measurements which where obtained from the classical part of the magneto-resistance measurements by the analysis method of Beck and Anderson [2]. Their analysis method could only be used in the low-doping concentration regime because we were not able to obtain reproducible results when three or more subbands are populated.…”

Experimental Demonstration of Room-Temperature Spin Transport inn-Type Germanium Epilayers

“…5(a)]. Furthermore, the temperature dependence of the mobility of the n-Ge channel μ n-Ge was determined using maximum-entropy mobility spectrum analysis [60,61]. The mobility in the n-Ge channel changed from 210 AE 30 cm 2 V −1 s −1 at RT to 376 AE 30 cm 2 V −1 s −1 at 130 K [see Fig.…”

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

“…With the QMSA method, one can easily extract the mobilities and densities of individual electron and holes in bulk semiconductor materials and heterostructures [25,26]. This method is shown to be superior to other methods such as the two-carrier fit, multi carrier fit, and mobility spectrum analysis methods [27][28][29][30]. The analysis details are listed in our previous work for AlGaN/GaN based systems [31].…”