Determination of Electron Affinity of In2 O 3 from Its Heterojunction Photovoltaic Properties

Abstract

In20~-Si, In203-Ge, Ir~203-GaAs, and I,n203-InP heterojunction solar cells have been fabricated and their photovoltaic properties have been investigated. All devices show rectifying and photovoltaic effects. The experimental results can be explained by a simple heterojunction energy band diagram. In order to match the experimentally observed polarities of the open-circuit voltage and short-circuit current of these heterojunction solar cells, the electron affinity of In203 materials is determined to be 4.45 eV. The substrateresistivity dependence of open-circuit voltage is consistent with the energy band diagram using the electron affinity value of 4.45 eV for In203. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.214.17.222 Downloaded on 2015-03-13 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.214.17.222 Downloaded on 2015-03-13 to IP

Photosensitization of Semiconductor Electrode by Cyanine Dye in Lipid Bilayer

“…The vacuum levels in Fig. 1 are drawn with an electron affinity for In203 of 4.4 eV (34,35), a normal potential of the saturated calomel electrode of 0.25V (36), and a Fermi level of the normal hydrogen electrode referred to vacuum of 4.5 eV (37). Lowering of pH leads to an increase of the flatband potential (Fig.…”

Large‐Area Tellurium/Germanium Heterojunction Grown by Molecular Beam Epitaxy for High‐Performance Self‐Powered Photodetector

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Electrospinning Hetero-Nanofibers In2O3/SnO2 of Homotype Heterojunction with High Gas Sensing Activity

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