In20~-Si, In203-Ge, Ir~203-GaAs, and I,n203-InP heterojunction solar cells have been fabricated and their photovoltaic properties have been investigated. All devices show rectifying and photovoltaic effects. The experimental results can be explained by a simple heterojunction energy band diagram. In order to match the experimentally observed polarities of the open-circuit voltage and short-circuit current of these heterojunction solar cells, the electron affinity of In203 materials is determined to be 4.45 eV. The substrateresistivity dependence of open-circuit voltage is consistent with the energy band diagram using the electron affinity value of 4.45 eV for In203. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.214.17.222 Downloaded on 2015-03-13 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.214.17.222 Downloaded on 2015-03-13 to IP

Neben Solarzellen mit In,O3‐Si‐Heteroübergang werden erstmals Solarzellen mit In,O3‐Ge‐, In2O3‐GaAs‐ und m20,‐InP‐Heteroübergängen durch Abscheidung aus der Dampfphase hergestellt.